Zobrazeno 1 - 10
of 94
pro vyhledávání: '"Pankaj B. Shah"'
Publikováno v:
Journal of Family Medicine and Primary Care, Vol 9, Iss 3, Pp 1380-1385 (2020)
Context: There is a paucity of research investigating the association between antenatal care (ANC) attendance and child undernutrition in Madhya Pradesh, India. Aim: To determine whether body weight status in children under the age of 5 years is asso
Externí odkaz:
https://doaj.org/article/e3c886bd2cb349c0ac2f50294d91ad08
Publikováno v:
Indian Journal of Pharmacy Practice. 16:52-59
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ec241fad52369dc7b3fb6ec7c9a81ff
https://doi.org/10.5530/097483261324
https://doi.org/10.5530/097483261324
Autor:
Abhijit Biswas, Rishi Maiti, Frank Lee, Cecilia Y. Chen, Tao Li, Anand B. Puthirath, Sathvik Ajay Iyengar, Chenxi Li, Xiang Zhang, Harikishan Kannan, Tia Gray, Md Abid Shahriar Rahman Saadi, Jacob Elkins, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Yuji Zhao, Alexander L. Gaeta, Manoj Tripathi, Alan Dalton, Pulickel M. Ajayan
Publikováno v:
Nanoscale Horizons. 8:641-651
Hexagonal boron nitride (h-BN) nanosheets are grown at room temperature by pulsed laser deposition that exhibits remarkable functional properties, creating a scenario for “h-BN on demand” under a frugal thermal budget, essential for nanotechnolog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b814c92078ed11da04616802915603cd
https://doi.org/10.1039/d2nh00557c
https://doi.org/10.1039/d2nh00557c
Autor:
Pankaj B. Shah, Vijaya Srinivasan, Ramanathan Sathianathan, S. Poonguzhali, Shalini Lakshmanan, K. Maheshkumar, Padmavathi Ramaswamy, Santhi Silambanan
Publikováno v:
Sri Ramachandra Journal of Health Sciences. 1:3-9
In the past two decades, rapid urbanization and globalization have adversely changed our lifestyle and diet habits. Our traditional healthy food habits have been replaced by processed foods with low nutritive value. These measures also saw a high pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f7c63a5c30c5b939b2f31cb08f5d27f
https://doi.org/10.25259/srjhs_6_2021
https://doi.org/10.25259/srjhs_6_2021
Autor:
Abhijit Biswas, Mingfei Xu, Kai Fu, Jingan Zhou, Rui Xu, Anand B. Puthirath, Jordan A. Hachtel, Chenxi Li, Sathvik Ajay Iyengar, Harikishan Kannan, Xiang Zhang, Tia Gray, Robert Vajtai, A. Glen Birdwell, Mahesh R. Neupane, Dmitry A. Ruzmetov, Pankaj B. Shah, Tony Ivanov, Hanyu Zhu, Yuji Zhao, Pulickel M. Ajayan
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee60cc5cca1a2a90406e5e4661c94f9f
http://arxiv.org/abs/2209.00643
http://arxiv.org/abs/2209.00643
Autor:
Pankaj B. Shah, Dmitry Ruzmetov, James Weil, A. Glen Birdwell, Tony Ivanov, Khamsouk Kingkeo, Kevin G. Crawford, Mahesh R. Neupane
Publikováno v:
IEEE Transactions on Electron Devices. 67:2270-2275
Wereport on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe invers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69020314235ed34c5b5ea86e2f487f74
https://doi.org/10.1109/ted.2020.2989736
https://doi.org/10.1109/ted.2020.2989736
Autor:
Abhijit Biswas, Qiyuan Ruan, Frank Lee, Chenxi Li, Sathvik Ajay Iyengar, Anand B. Puthirath, Xiang Zhang, Harikishan Kannan, Tia Gray, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Manoj Tripathi, Alan Dalton, Boris I. Yakobson, Pulickel M. Ajayan
Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::366222cba99c912fcb5dfb61a89a2811
Publikováno v:
Journal of Preventive Medicine and Holistic Health. 5:58-61
Introduction: Adolescence is a transition phase characterized by physical, physiological and psycho-social changes. The adolescents are a powerful human resource and they must be provided with the opportunity for holistic development in order to achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2fdf1bd819d62d95d3c3ee318c26260
https://doi.org/10.18231/j.jpmhh.2019.010
https://doi.org/10.18231/j.jpmhh.2019.010
Autor:
Leonard M. De La Cruz, Mahesh R. Neupane, Dmitry Ruzmetov, Tony Ivanov, James Weil, A. G. Birdwell, Pankaj B. Shah
Publikováno v:
Radar Sensor Technology XXV.
High power radio frequency (RF) transfer-doped diamond field effect transistors (FETs) are being fabricated at the Army Research Laboratory (ARL). To implement these into radar systems we have a parallel effort to extract accurate compact models from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1978fda988d9db00a683a6044c8eb8be
https://doi.org/10.1117/12.2585984
https://doi.org/10.1117/12.2585984
Publikováno v:
Radar Sensor Technology XXV.
Surface induced transfer doping (SITD) is a novel, highly efficiency doping technique that is being used to invoke the p-type surface conductivity of intrinsic diamond for high-frequency, high-power electronic devices. In the SITD process, a high ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97e5fb35250d56df707d4352bbf347c4
https://doi.org/10.1117/12.2585867
https://doi.org/10.1117/12.2585867