Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Panglijen Candra"'
Publikováno v:
IEEE Transactions on Instrumentation and Measurement. 64:103-111
Accurate detection of singular region using ground-penetrating radar (GPR) is very useful in assessing roadway pavement, bridge deck concrete structure, and railroad ballast conditions. To locate an object within the large radargram involves extensiv
Publikováno v:
IEEE Transactions on Magnetics. 51:1-3
This paper provides a first tunable low-noise amplifier (LNA) design with Permalloy (Py) enabled inductors. Tunable inductor is an important passive device in adaptive radio frequency circuit design. In this paper, a new integrated tunable inductor i
Autor:
Tian Xia, Panglijen Candra
Publikováno v:
ISCAS
This paper investigates a switchable dual-band low noise amplifier design that can operate at X-band and Ka-band using monolithic SiGe heterojunction bipolar transistors (HBT) technology. The LNA is based on a single stage cascade common emitter ampl
Autor:
Scott K. Reynolds, Bodhisatwa Sadhu, Vibhor Jain, Peng Cheng, John J. Pekarik, David L. Harame, Thomas Kessler, Peter B. Gray, Panglijen Candra, Blaine J. Gross, K. Newton, Renata Camillo-Castillo, Arun Natarajan, Alberto Valdes-Garcia
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
Autor:
James E. Dunn, Thomas Kessler, Peter B. Gray, R. Camillo-Castillo, D. L. Harame, Peng Cheng, Jeffrey P. Gambino, Vibhor Jain, Pekarik John J, Panglijen Candra
Publikováno v:
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
A manufacturable 130nm SiGe BiCMOS RF technology for high-performance mm-wave analog applications having a high-speed SiGe Heterojunction Bipolar Transistor (HBT) integrated into a full-featured RFCMOS is presented. The technology features a high per
A cost-competitive high performance Junction-FET (JFET) in CMOS process for RF & analog applications
Autor:
J. Rascoe, Douglas B. Hershberger, Xiaowei Tian, David L. Harame, Richard A. Phelps, S. Sweeney, Yun Shi, James S. Dunn, Robert M. Rassel, Panglijen Candra, BethAnn Rainey
Publikováno v:
2010 IEEE Radio Frequency Integrated Circuits Symposium.
in this paper, we present a cost-effective JFET integrated in 0.18µm RFCMOS process. The design is highly compatible with standard CMOS process, therefore can be easily scaled and implemented in advanced technology nodes. The design impact on R on a
Autor:
R. Previti-Kelly, J. Forsyth, Panglijen Candra, Alvin J. Joseph, H. Lafontaine, Mike McPartlin, M. Doherty
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
This paper describes the optimization of Silicon Germanium (SiGe) NPN bipolar transistors for power amplifier performance. Minimizing the collector resistance and barrier effects in a power device are important to optimize the RF characteristics. Ove
Autor:
Peter B. Gray, P. Chapman, M. Gordon, R. Previty-Kelly, Douglas B. Hershberger, Robert M. Rassel, Alan F. Norris, Alvin J. Joseph, S.L. Von Bruns, Mattias E. Dahlstrom, Michael J. Zierak, Michael L. Gautsch, J. Dunn, Panglijen Candra, Natalie B. Feilchenfeld, J. Lukaitis, Renata Camillo-Castillo, S. St Onge, Benjamin T. Voegeli, K. Watson, Nicholas Theodore Schmidt, Z.X. He
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
For the first time, we report a 0.24 mum SiGe BiCMOS technology that offers full suite of active device including three distinct NPNs, a vertical PNP, CMOS supporting three different operating-voltages, and wide range of passive devices. In particula
Autor:
J. Dunn, Qizhi Liu, Ramana M. Malladi, Peter B. Gray, Ping-Chuan Wang, Kenneth J. Stein, Douglas B. Hershberger, R. Previti-Kelly, Panglijen Candra, Ephrem G. Gebreselasie, Benjamin T. Voegeli, K. Watson, Wade J. Hodge, Peter J. Lindgren, Zhong-Xiang He, Alvin J. Joseph
Publikováno v:
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on
Publikováno v:
Applied Physics Letters. 88:172102
Experimental results on the electrical characteristics of Hg-alkanethiol∕arenethiol-Au molecular junctions are used to develop a physical model for the hysteretic negative-differential resistance (NDR) for these, and possibly other, metal-molecule-