Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Pang-Yen Tsai"'
Autor:
Pang-yen Tsai, 蔡邦彥
102
As the emotional needs pursuit by consumers for products, designers put more emphasis on consumers’ using and emotional experiences toward products. This study is based on the theory of oxymoron and the theory of dialectic, trying to figur
As the emotional needs pursuit by consumers for products, designers put more emphasis on consumers’ using and emotional experiences toward products. This study is based on the theory of oxymoron and the theory of dialectic, trying to figur
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/xf8829
Autor:
Y.H. Huang, W. C. Chiou, Yi-Chun Shih, T. Y. Wang, W.J. Wu, Y.C. Lin, C.H. Chang, F.W. Tsai, C. H. Tung, S.P. Jeng, Kuo-Nan Yang, Doug C. H. Yu, M. F. Chen, Pang-Yen Tsai, Jing-Cheng Lin, E.B. Liao, Shang-Yun Hou, Hun-Hsien Chang, Y.L. Lin, T.J. Wu, Hung Jeng-Nan, C.L. Yu
Publikováno v:
2010 International Electron Devices Meeting.
Technology challenges and solutions in the development and fabrication of high-density three dimensional (3D) chip integration structures have been investigated. Critical 3D integrated circuit (IC) enabling technologies, such as through silicon via (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ad4c97f122b261af4d84267041af778
https://doi.org/10.1109/iedm.2010.5703277
https://doi.org/10.1109/iedm.2010.5703277
Novel 20nm hybrid SOI/bulk CMOS technology with 0.183μm/sup 2/ 6T-SRAM cell by immersion lithography
Autor:
null Hou-Yu Chen, null Chang-Yun Chang, null Chien-Chao Huang, null Tang-Xuan Chung, null Sheng-Da Liu, null Jiunn-Ren Hwang, null Yi-Hsuan Liu, null Yu-Jun Chou, null Hong-Jang Wu, null King-Chang Shu, null Chung-Kan Huang, null Jan-Wen You, null Jaw-Jung Shin, null Chun-Kuang Chen, null Chia-Hui Lin, null Ju-Wang Hsu, null Bao-Chin Perng, null Pang-Yen Tsai, null Chi-Chun Chen, null Jyu-Horng Shieh, null Han-Jan Tao, null Shih-Chang Chen, null Tsai-Sheng Gau, null Fu-Liang Yang
Publikováno v:
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..
For the first time, a novel hybrid SOI/bulk CMOS technology with 20nm gate length and low-leakage 1.3nm thick SiON gate dielectric has been developed for advanced SOC applications. 26% (for N-FET) and 35% (for P-FET) improvements of intrinsic gate de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b6438477da572f34e824ad8a96c84a7
https://doi.org/10.1109/.2005.1469194
https://doi.org/10.1109/.2005.1469194
Autor:
Wang, H.C.-H., Shang-Jr Chen, Ming-Fang Wang, Pang-Yen Tsai, Ching-Wei Tsai, Ta-Wei Wang, Ting, S.M., Tuo-Hung Hou, Peng-Soon Lim, Huan-Just Lin, Ying Jin, Hun-Jan Tao, Shih-Chang Chen, Diaz, C.H., Mong-Song Liang, Chenming Hu
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p161-164, 4p
Autor:
Hou-Yu Chen, Chang-Yun Chang, Chien-Chao Huang, Tang-Xuan Chung, Sheng-Da Liu, Jiunn-Ren HwangYi-Hsuan Liu, Yu-Jun Chou, Hong-Jang Wu, King-Chang Shu, Chung-Kan Huang, Jan-Wen You, Jaw-Jung Shin, Chun-Kuang Chen, Chia-Hui Lin, Ju-Wang Hsu, Bao-Chin Perng, Pang-Yen Tsai, Chi-Chun Chen, Jyu-Horng Shieh, Han-Jan Tao
Publikováno v:
2005 Digest of Technical Papers. 2005 Symposium on VLSI Technology; 2005, p16-17, 2p