Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Pang Yan Tsai"'
Autor:
Shao Hsing Weng, Wen Hsin Chang, Ching Wen Chen, Pei Shan Wu, Ze Shiang Lin, Jen-Hung Wang, Min Shu Hsieh, Hsuan-Yu Chen, Sung-Liang Yu, Pang Yan Tsai, Jyoti S. Choudhary, Fatemeh Zamanzad Ghavidel, Ya Hsuan Chang, Kuen Tyng Lin, Pei-Yi Lin, Wei Hung Chang, Inge Jonassen, Ching-Tai Chen, Yu Tai Wang, Henry Rodriguez, Chien-Yu Lin, Yan Si Chen, Pei Yuan Sheu, Chen Ting Hung, Yih-Leong Chang, Pan-Chyr Yang, Chen-Tu Wu, Yu-Ju Chen, Hao Chin Yang, Ana I. Robles, Miao-Hsia Lin, Ta Chi Yen, Ke Chieh Huang, Huei-Wen Chen, Kang-Yi Su, Chia Li Han, Jin-Shing Chen, Mong-Wei Lin, Theodoros I. Roumeliotis, Gee-Chen Chang, Yi Jing Hsiao, Yet-Ran Chen, Yi Wei Lin, Chi Ting Lai, Ting-Yi Sung, Yi-Ju Chen, Lovely Raghav
Publikováno v:
Cell. 182:226-244.e17
Lung cancer in East Asia is characterized by a high percentage of never-smokers, early onset and predominant EGFR mutations. To illuminate the molecular phenotype of this demographically distinct disease, we performed a deep comprehensive proteogenom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6a15eb6237f82b7c12985858ddcbbe3
https://doi.org/10.1016/j.cell.2020.06.012
https://doi.org/10.1016/j.cell.2020.06.012
Autor:
Pang-Yan Tsai, 蔡邦彥
93
This thesis is intended to reduce the computational complexity for the core of MPEG-4 Harmonic Vector eXcitation Coding (HVXC). We’ll briefly discuss the Spectrum Envelope Vector Quantization (SEVQ), the main core of HVXC, to realize the re
This thesis is intended to reduce the computational complexity for the core of MPEG-4 Harmonic Vector eXcitation Coding (HVXC). We’ll briefly discuss the Spectrum Envelope Vector Quantization (SEVQ), the main core of HVXC, to realize the re
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/08585244916283135978
Autor:
Mao-Lin Huang, Chia Chiung Lo, Edward Yi Chang, Meng Ku Chen, He Yong Hwang, Hung Ta Lin, Chen Yu Chen, Hui Cheng Chang, Yueh Chin Lin, Jang Syun Ming, Tze Liang Lee, Sun Yuan Chen, Pang Yan Tsai, Chun Hsiung Lin, Carlos H. Diaz
Publikováno v:
Applied Physics Express. 7:041202
A low interface trap density (Dit) Al2O3/In0.53Ga0.47As/Si MOS capacitor fabricated on an In0.53Ga0.47As heterostructure layer directly grown on a 300 mm on-axis Si(100) substrate by MOCVD with a very thin buffer layer is demonstrated. Compared with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90b0f3586c1fed6b35f6574a458f9ce
https://doi.org/10.7567/apex.7.041202
https://doi.org/10.7567/apex.7.041202