Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Panda, Jaya Kumar"'
Autor:
Bagheri, Ahmad, Taghavi, Somayeh, Bellani, Sebastiano, Salimi, Pejman, Beydaghi, Hossein, Panda, Jaya‐Kumar, Isabella Zappia, Marilena, Mastronardi, Valentina, Gamberini, Agnese, Balkrishna Thorat, Sanjay, Abruzzese, Matteo, Pasquale, Lea, Prato, Mirko, Signoretto, Michela, Feng, Xinliang, Bonaccorso, Francesco
Publikováno v:
In Chemical Engineering Journal 15 September 2024 496
Autor:
Romano, Valentino, Martin-Garcia, Beatriz, Bellani, Sebastiano, Marasco, Luigi, Panda, Jaya Kumar, Oropesa-Nunez, Reinier, Najafi, Leyla, Castillo, Antonio Esau Del Rio, Prato, Mirko, Mantero, Elisa, Pellegrini, Vittorio, Angelo, Giovanna D, Bonaccorso, Francesco
Publikováno v:
ChemPlusChem, 2019, 84, 882
The fabrication of electrochemical double-layer capacitors (EDLCs) with high areal capacitance relies on the use of elevated mass loadings of highly porous active materials. Herein, we demonstrate a high-throughput manufacturing of graphene/nanotubes
Externí odkaz:
http://arxiv.org/abs/2005.13024
Autor:
Petroni, Elisa, Lago, Emanuele, Bellani, Sebastiano, Boukhvalov, Danil W., Politano, Antonio, Gurbulak, Bekir, Duman, Songul, Prato, Mirko, Gentiluomo, Silvia, Oropesa-Nunez, Reinier, Panda, Jaya-Kumar, Toth, Peter S., Castillo, Antonio Esau Del Rio, Pellegrini, Vittorio, Bonaccorso, Francesco
Publikováno v:
Small, Volume 14, Issue 26, June 27, 2018 1800749
Single- and few-layered InSe flakes are produced by the liquid-phase exfoliation of beta-InSe single crystals in 2-propanol, obtaining stable dispersions with a concentration as high as 0.11 g/L. Ultracentrifugation is used to tune the morphology, i.
Externí odkaz:
http://arxiv.org/abs/1903.08967
Autor:
Lin, Hazel, del Rio Castillo, Antonio Esau, González, Viviana Jehová, Jacquemin, Lucas, Panda, Jaya Kumar, Bonaccorso, Francesco, Vázquez, Ester, Bianco, Alberto
Publikováno v:
In NanoImpact January 2023 29
Autor:
Patra, Atanu, Panda, Jaya Kumar, Roy, Anushree, Gemmi, Mauro, David, Jérémy, Ercolani, Daniele, Sorba, Lucia
The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the TO phonon mode along the axis of these nanowires. We attribute the obse
Externí odkaz:
http://arxiv.org/abs/1506.00401
Autor:
Panda, Jaya Kumar, Chakraborty, Arup, Dasgupta, Indra, Hasanu, Elena, Ercolani, Daniele, Gemmi, Mauro, Sorba, Lucia, Roy, Anushree
We study band alignment in wurtzite-zincblende polytype InAs heterostructured nanowires using temperature dependent resonance Raman measurements. Nanowires having two different wurtzite fractions are investigated. Using visible excitation wavelengths
Externí odkaz:
http://arxiv.org/abs/1505.05306
Autor:
Zahid, Muhammad, Del Río Castillo, Antonio Esaú, Thorat, Sanjay Balkrishna, Panda, Jaya Kumar, Bonaccorso, Francesco, Athanassiou, Athanassia
Publikováno v:
In Composites Science and Technology 10 November 2020 200
Autor:
Panda, Jaya Kumar, Roy, Anushree, Gemmi, Mauro, Husanu, Elena, Li, Ang, Ercolani, Daniele, Sorba, Lucia
Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV. Resonances at 2.38 eV and 2.67 eV of the E1(LO) mode and at 2.67 eV of the
Externí odkaz:
http://arxiv.org/abs/1303.7058
Autor:
Panda, Jaya Kumar, Roy, Anushree, Singha, Achintya, Gemmi, Mauro, Ercolani, Daniele, Pellegrini, Vittorio, Sorba, Lucia
An internal field induced resonant intensity enhancement of Raman scattering of phonon excitations in InAs nanowires is reported. The experimental observation is in good agreement with the simulated results for the scattering of light under varying i
Externí odkaz:
http://arxiv.org/abs/1205.4817
Autor:
Panda, Jaya Kumar, Roy, Anushree, Singha, Achintya, Gemmi, Mauro, Ercolani, Daniele, Pellegrini, Vittorio, Sorba, Lucia
We report a combined electron transmission and Raman spectroscopy study of InAs nanowires. We demonstrate that the temperature dependent behavior of optical phonon energies can be used to determine the relative wurtzite fraction in the InAs nanowires
Externí odkaz:
http://arxiv.org/abs/1112.5726