Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Panagiota Arnou"'
Autor:
Kam Hoe Ong, Ramasamy Agileswari, Biancamaria Maniscalco, Panagiota Arnou, Chakrabarty Chandan Kumar, Jake W. Bowers, Marayati Bte Marsadek
Publikováno v:
International Journal of Photoenergy, Vol 2018 (2018)
Copper Indium Gallium Selenide- (CIGS-) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6% which is comparable to the
Externí odkaz:
https://doaj.org/article/a9756b621d0d4e7d84f822ca182ae5f7
Autor:
Michael A. Scarpulla, Daniel Siopa, Sergio Giraldo, Phillip J. Dale, Panagiota Arnou, Thomas Paul Weiss, Alberto Lomuscio, Edgardo Saucedo
Publikováno v:
RSC Advances. 10:584-594
Ultra-fast thermal annealing of semiconductor materials using a laser can be revolutionary for short processing times and low manufacturing costs. Here we investigate Cu–In–Se thin films as precursors for CuInSe2 semiconductor absorber layers via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a574a7d6795c9371c67749953574c3f4
https://doi.org/10.1039/c9ra06896a
https://doi.org/10.1039/c9ra06896a
Autor:
Mael Guennou, Michele Melchiorre, Daniel Siopa, Panagiota Arnou, Inmaculada Peral Alonso, Christian Pauly, Philip J. Dale, Susanne Siebentritt, Thomas Paul Weiss
Publikováno v:
Physical Review Applied. 14
Polycrystalline $(\mathrm{Sb},\mathrm{Bi}{)}_{2}{\mathrm{Se}}_{3}$ thin-film semiconductors are grown by coevaporation with a subsequent annealing process. It is shown that $\mathrm{Bi}$ can be incorporated into the ${\mathrm{Sb}}_{2}{\mathrm{Se}}_{3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bbf532c7b0f2b7cdbfd94dfa57efcb6
https://doi.org/10.1103/physrevapplied.14.024014
https://doi.org/10.1103/physrevapplied.14.024014
Autor:
Chakrabarty Chandan Kumar, Agileswari K. Ramasamy, Panagiota Arnou, Kam Hoe Ong, Marayati Marsadek, Biancamaria Maniscalco, Jake W. Bowers
Publikováno v:
Materials Technology. 33:723-729
As part of the device fabrication process, selenization step is required to crystallise the CIGS absorber layer. However, during high temperature selenization process, excessive formation of MoSe2 ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b832dddc59e78ed4abc131bdf7abb4b7
https://doi.org/10.1080/10667857.2018.1502512
https://doi.org/10.1080/10667857.2018.1502512
Autor:
John M. Walls, Stephen Whitelegg, Nigel Pickett, Panagiota Arnou, Ombretta Masala, Alexander Eeles, Cary Allen, Zugang Liu, Stuart Stubbs, Paul Kirkham, Christopher Newman, Jake W. Bowers
Publikováno v:
IEEE Journal of Photovoltaics. 8:288-292
Thin film Cu(In,Ga)(S,Se)2-based (generally referred to as CIGS) solar cells represent a promising alternative to conventional crystalline silicon solar cells due to their high efficiencies, reduced cost, and better material utilization. In recent ye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba9bc6949075f8dcc2382ff0ca97d9a
https://doi.org/10.1109/jphotov.2017.2762581
https://doi.org/10.1109/jphotov.2017.2762581
Autor:
Nathalie Valle, Panagiota Arnou, Phillip J. Dale, Thomas Paul Weiss, Michele Melchiorre, Susanne Siebentritt
Publikováno v:
Infrared Sensors, Devices, and Applications IX.
Polycrystalline thin films of (Sb0.42Bi0.58)2Se3 are prepared by co-evaporation in a two-step process. First, the semiconducting layer is grown at 240°C. Subsequently the films are annealed in-situ at various temperatures. The incorporation of Bi in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a3205b8c59994ddb99d593b597dfd0e
https://doi.org/10.1117/12.2529326
https://doi.org/10.1117/12.2529326
Autor:
Panagiota, Arnou, Alberto, Lomuscio, Thomas P, Weiss, Daniel, Siopa, Sergio, Giraldo, Edgardo, Saucedo, Michael A, Scarpulla, Phillip J, Dale
Publikováno v:
RSC advances. 10(1)
Ultra-fast thermal annealing of semiconductor materials using a laser can be revolutionary for short processing times and low manufacturing costs. Here we investigate Cu-In-Se thin films as precursors for CuInSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::2abeef0199b84ee26410919e0d10a5f7
https://pubmed.ncbi.nlm.nih.gov/35492523
https://pubmed.ncbi.nlm.nih.gov/35492523
Autor:
Marayati Marsadek, Chakrabarty Chandan Kumar, Panagiota Arnou, Ramasamy Agileswari, Biancamaria Maniscalco, Kam Hoe Ong, Jake W. Bowers
Publikováno v:
International Journal of Photoenergy, Vol 2018 (2018)
Copper Indium Gallium Selenide- (CIGS-) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6% which is comparable to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8042b9614e3ddf67573a22979f6ba7c7
https://doaj.org/article/a9756b621d0d4e7d84f822ca182ae5f7
https://doaj.org/article/a9756b621d0d4e7d84f822ca182ae5f7
Autor:
John M. Walls, Jake W. Bowers, Andrei V. Malkov, Mustafa Togay, Alexander Eeles, Sona Ulicna, Lewis D. Wright, Panagiota Arnou
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Cu(In, Ga)(S,Se) 2 (CIGS) thin films were formed by a low cost solution-based approach using metal sulfide precursors. The stoichiometry of the absorber layer is tailored in order to improve film morphology and electrical properties. Cu y ln 0.7 Ga 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3b790b084bc3563845e402419d620a6
https://doi.org/10.1109/pvsc.2017.8366765
https://doi.org/10.1109/pvsc.2017.8366765
Autor:
Mustafa Togay, Panagiota Arnou, John M. Walls, Jake W. Bowers, Sona Ulicna, Lewis D. Wright, Andrei V. Malkov, Alexander Eeles, Ali Abbas
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
This study investigated an approach to control the MoSe2 layer formation at the Mo/CIGS interface of hydrazine-free solution-processed CIGS solar cells. The MoSe2 layer thickness reduction was achieved by deposition of a MoNx back contact barrier lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60ac56ba3bd8d6ef3809968ac36a3577
https://doi.org/10.1109/pvsc.2017.8366174
https://doi.org/10.1109/pvsc.2017.8366174