Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Pan-Gum Jung"'
Publikováno v:
Crystals, Vol 12, Iss 9, p 1301 (2022)
In this study, we fabricated metal–insulator–semiconductor field-effect transistors (MISFETs) based on nanolayered molybdenum diselenide (MoSe2) using two insulator materials, silicon dioxide (SiO2) and silicon nitride (SiN). We performed morphol
Externí odkaz:
https://doaj.org/article/ff2029cff93d4ca3a7afc273013e351a
Publikováno v:
physica status solidi (a). 219:2100818
Publikováno v:
Science of Advanced Materials. 10:627-631
Publikováno v:
Journal of Clean Energy Technologie. 6:26-30
Publikováno v:
Journal of Advanced Engineering and Technology. 10:37-41
Publikováno v:
Optik. 224:165427
Two-dimensional (2D) molybdenum diselenide (MoSe2) has potential applications in photodetection. In this study, we examined heterostructures based on Gr/h-BN/MoSe2 top-gated metal-insulator-semiconductor field-effect transistors (MISFETs) and Si/SiO2
Publikováno v:
IOP Conference Series: Earth and Environmental Science. 307:012004
In this paper, Common-mode voltage (CMV) is responsible for overvoltage stress to the winding insulation and bearing damage of an AC motor. High dv/dt of CMV causes leakage currents, which create noise problems to the equipment installed near the con
Publikováno v:
Optical Materials Express. 7:587
Recently, two-dimensional materials were widely studied as candidates for new generation of photodetectors. In this paper, we reported on the fabrication and the optoelectronic characterizations of p-type gallium selenide (GaSe) back-gated field effe
Publikováno v:
2008 17th IEEE International Symposium on the Applications of Ferroelectrics.
BLT thin film capacitor was fabricated by the novel method of chemical mechanical polishing (CMP) process. The electrical characteristics including P-V and I-V of BLT capacitor were damaged by the polishing pressure which is one of the main factors t
Publikováno v:
IOP Conference Series: Earth & Environmental Science; Aug2019, Vol. 307 Issue 1, p1-1, 1p