Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Pan Yao-Bo"'
Autor:
Yang Zhi-Jian, Qin Zhi-Xin, YU Tong-Jun, Zhang Guo-Yi, MU Sen, Huang Liu-Bing, Chen Zhi-Zhong, Pan Yao-Bo, Jia Chuan-Yu
Publikováno v:
Chinese Physics Letters. 24:3245-3248
Electrical characteristics of In0.05Ga0.95N/Al0.07Ga0.93N and In0.05Ga0.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 nm wavelength are measured. It is found that for InGaN/AlGaN MQW LEDs, both ideality factor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5ea08d4f1ad00e87d7abb900415e1fe
https://doi.org/10.1088/0256-307x/24/11/061
https://doi.org/10.1088/0256-307x/24/11/061
Autor:
Chen Zhi-Tao, Pan Yao-Bo, SU Yue-Yong, Guo Li-Ping, Xu Ke, Zhang Han, Yang Zhi-Jian, Shen Bo, Zhang Guo-Yi
Publikováno v:
Chinese Physics Letters. 23:1257-1260
We investigate mosaic structure evolution of GaN films annealed for a long time at 800°C grown on sapphire substrates by metalorganic chemical vapour deposition by high-resolution x-ray diffraction. The result show that residual stress in GaN films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6c847de878d86c23b1e87d083962447
https://doi.org/10.1088/0256-307x/23/5/053
https://doi.org/10.1088/0256-307x/23/5/053
Autor:
Zhang Guo-Yi, Bao Kui, Zhao Lu-Bing, Yang Zhi-Jian, Hu Xiaodong, Xu Ke, Wu Jie-Jun, Pan Yao-Bo
Publikováno v:
Chinese Physics Letters. 25:4342-4344
GaN-based laser diodes (LDs) with 399 nm wavelength are grown on sapphire substrates by metal organic chemical vapour deposition (MOCVD). Electroluminescence spectra of the fabricated LDs show that the LDs from some grown wafers failed to emit laser.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44038c26e39273dde535feaa9d952318
https://doi.org/10.1088/0256-307x/25/12/044
https://doi.org/10.1088/0256-307x/25/12/044
Autor:
Chen Zhi-Zhong, YU Tong-Jun, Qin Zhi-Xin, Yang Zhi-Jian, Kang Xiang-Ning, Zhang Guo-Yi, Pan Yao-Bo
Publikováno v:
Chinese Physics Letters. 24:1365-1367
InGaN/GaN MQWs, InGaN/AlGaN MQWs and InGaN/AlInGaN MQWs are grown on (0001) sapphire substrates by MOCVD. Membrane samples are fabricated by laser lift-off technology. The photoluminescence spectra of membranes show a blue shift of peak positions in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e33a8bf5806538a583eb5ea7b83d4f0a
https://doi.org/10.1088/0256-307x/24/5/066
https://doi.org/10.1088/0256-307x/24/5/066
Publikováno v:
Chinese Physics Letters. 23:256-258
The effect of Al doping in the GaN layer of InGaN/GaN multiple quantum-well light emitting diodes (LEDs) grown by metalorganic chemical vapour deposition is investigated by using photoluminescence (PL) and high-resolution x-ray diffraction. The full
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8540b19bb96695b6d75a626a1e02b78
https://doi.org/10.1088/0256-307x/23/1/074
https://doi.org/10.1088/0256-307x/23/1/074
Autor:
Yang Zhi-Jian, Zhang Guo-Yi, YU Tong-Jun, Hu Xiaodong, Lu Yu, Pan Yao-Bo, Lu Min, HU Cheng-Yu
Publikováno v:
Chinese Physics Letters. 21:2016-2018
The Mg-delta-doped GaN structure has been grown by low-pressure metalorganic chemical vapour deposition. The Hall-effect measurements reveal that the electrical properties are enhanced. The hole concentration is enhanced twice and hole mobility is en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72637080fac68fb44c0f6d81af242ef3
https://doi.org/10.1088/0256-307x/21/10/042
https://doi.org/10.1088/0256-307x/21/10/042
Autor:
Tao Yuebin, Sang Li-Wen, Pan Yao-Bo, Li Ding, Fang Hao, Chen Cheng, Yan Jianfeng, Li Shitao, Chen Zhi-Tao, Hao Maosheng, Yang Zhi-Jian, Zhang Guo-Yi, Zhu Guangmin, Chen Zhizhong
Publikováno v:
physica status solidi c. 6
In the PDF file of the paper by Y. B. Tao et al. [Phys. Status Solidi C 6, S317 (2009)], published online 7 May 2009, a wrong image was loaded: in place of Fig. 2, inadvertently Fig. 1 was shown again. This Erratum displays Figs. 1 and 2 properly. (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a35147fefffd27e30d8c68492587dc34
https://doi.org/10.1002/pssc.200980991
https://doi.org/10.1002/pssc.200980991
Autor:
Hao Maosheng, Yang Zhi-Jian, Chen Zhi-Tao, Zhang Guo-Yi, Sang Li-Wen, Tao Yuebin, Yan Jianfeng, Li Ding, Chen Cheng, Pan Yao-Bo, Zhu Guangmin, Li Shitao, Fang Hao, Chen Zhizhong
Publikováno v:
physica status solidi c. 6
Two GaN samples, with and without high temperature (HT)-AlN interlayer (labelled as sample A and B, respectively) grown by MOCVD on AlN template, were investigated by double-crystal X-ray diffraction (DC-XRD), photoluminescence (PL), and atomic force
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c09c227ff698f3041e8ff35524a9bd1d
https://doi.org/10.1002/pssc.200880888
https://doi.org/10.1002/pssc.200880888
Publikováno v:
Chinese Physics Letters. 27:038503
We report the enhancement of the light extraction of InGaN-based green light emitting diodes (LEDs) via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::756c314d3a770d0f2c406b5e0d4ff8b8
https://doi.org/10.1088/0256-307x/27/3/038503
https://doi.org/10.1088/0256-307x/27/3/038503
Publikováno v:
Acta Physica Sinica. 56:3350
A series of AlInGaN films with different contents of Al and In were grown by metal-organic chemical vapor deposition on sapphire with GaN (>2μm) intermediate layer. Rutherford backscattering/channeling was used to measure the compositions and the cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b07c42be92b76c5ebfe42a41827a0bfd
https://doi.org/10.7498/aps.56.3350
https://doi.org/10.7498/aps.56.3350