Zobrazeno 1 - 10
of 1 129
pro vyhledávání: '"Pan Anlian"'
Autor:
Xing, Chunzi, Wang, Yu, Schneider, Tobias, Zhai, Xiaokun, Zhang, Xinzheng, Xiong, Zhenyu, Wu, Hao, Ren, Yuan, Dai, Haitao, Wang, Xiao, Pan, Anlian, Schumacher, Stefan, Ma, Xuekai, Gao, Tingge
Moire lattices attract intensive attention in the double graphene/TMD layers and photonic crystals due to the interesting exotic physics within these structures. However, precise measurement of the moir'e ground states, excited states and Bloch bands
Externí odkaz:
http://arxiv.org/abs/2408.02431
Autor:
Zhai, Xiaokun, Gao, Ying, Ma, Xuekai, Xing, Chunzi, Wang, Xiao, Pan, Anlian, Assmann, Marc, Schumacher, Stefan, Gao, Tingge
Coupling of orbital and spin degrees of freedom gives rise to intriguing physical phenomena in bosonic condensates, such as formation of stripe phases and domains with vortex arrays. However, the robust locking of spin and orbital degrees of freedom
Externí odkaz:
http://arxiv.org/abs/2403.15133
Going beyond the bistability paradigm of the charge polarizations in ferroelectrics is highly desired for ferroelectric memory devices toward ultra-high density information storage. Here, we propose to build multistates in composite ferroelectrics, w
Externí odkaz:
http://arxiv.org/abs/2403.11813
Autor:
Zhong, Yangguang, Yue, Shuai, Liu, Huawei, Xia, Yuexing, Pan, Anlian, Chen, Shula, Liu, Xinfeng
Carrier transport in nanodevices plays a crucial role in determining their functionality. In the post-Moore era, the behavior of carriers near surface or interface domains the function of the whole devices. However, the femtosecond dynamics and nanom
Externí odkaz:
http://arxiv.org/abs/2403.10848
Autor:
Braun Kai, Laible Florian, Hauler Otto, Wang Xiao, Pan Anlian, Fleischer Monika, Meixner Alfred J.
Publikováno v:
Nanophotonics, Vol 7, Iss 9, Pp 1503-1516 (2018)
In this review, we focus on the experimental demonstration of enhanced emission from single plasmonic tunneling junctions consisting of coupled nano antennas or noble metal tips on metallic substrates in scanning tunneling microscopy. Electromagnetic
Externí odkaz:
https://doaj.org/article/eb74757a5e4d4c4997c32265400de032
Autor:
Tian, Zhiqiang, Zhu, Ziming, Zeng, Jiang, Liu, Chao-Fei, Yang, Yurong, Pan, Anlian, Chen, Mingxing
Publikováno v:
Phys. Rev. B 109, 085432 (2024)
Materials with ferroelectrically switchable topological properties are of interest for both fundamental physics and practical applications. Using first-principles calculations, we find that stacking ferroelectric $\alpha$-In$_2$Se$_3$ monolayers into
Externí odkaz:
http://arxiv.org/abs/2402.18274
Doping induced multiferroicity and quantum anomalous Hall effect in $\alpha$-In$_2$Se$_3$ thin films
Autor:
Tian, Zhiqiang, Li, Jin-Yang, Ouyang, Tao, Liu, Chao-Fei, Liu, Ziran, Li, Si, Pan, Anlian, Chen, Mingxing
Publikováno v:
Appl. Phys. Lett. 124, 043101 (2024)
In flat-band materials, the strong Coulomb interaction between electrons can lead to exotic physical phenomena. Recently, $\alpha$-In$_2$Se$_3$ thin films were found to possess ferroelectricity and flat bands. In this work, using first-principles cal
Externí odkaz:
http://arxiv.org/abs/2402.09770
Autor:
Chiout, Anis, Tempez, Agnès, Carlier, Thomas, Chaigneau, Marc, Cadiz, Fabian, Rowe, Alistair, Zheng, Biyuan, Pan, Anlian, Pala, Marco, Oehler, Fabrice, Ouerghi, Abdelkarim, Chaste, Julien
Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical
Externí odkaz:
http://arxiv.org/abs/2402.03061
The bistability of charge polarization in ferroelectric materials has long been the basis of ferroelectric devices. However, the ferroelectricity tends to be vanishing as the thickness of materials is reduced to a few nanometers or thinner due to the
Externí odkaz:
http://arxiv.org/abs/2312.13856
Autor:
Li, Kaihui, Yin, Long-Jing, Che, Chenglong, Liu, Xueying, Xiao, Yulong, Liu, Songlong, Tong, Qingjun, Li, Si-Yu, Pan, Anlian
Strongly correlated states are commonly emerged in twisted bilayer graphene (TBG) with magic-angle, where the electron-electron (e-e) interaction U becomes prominent relative to the small bandwidth W of the nearly flat band. However, the stringent re
Externí odkaz:
http://arxiv.org/abs/2307.04170