Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Pamela René Fischer"'
Autor:
Jorge A. Kittl, Wouter Polspoel, M. Schaekers, Tom E. Blomberg, Johannes Meersschaut, Aude Rothschild, J.W. Maes, Paola Favia, Mihaela Popovici, Hugo Bender, Ben Kaczer, Karl Opsomer, Christoph Adelmann, Bogdan Govoreanu, Robin Degraeve, Werner Knaepen, N. Menou, Pamela René Fischer, Wilfried Vandervorst, Valery V. Afanas'ev, A. Franquet, Dieter Pierreux, T. Conrad, Dirk Wouters, S. Van Elshocht, Malgorzata Jurczak, J. Swerts, Mohammed Zahid, K. Tomida, Geoffrey Pourtois, Christophe Detavernier, X.P. Wang, Sergiu Clima, D. Manger, Annelies Delabie, Bert Brijs, J. Van Houdt, M. A. Pawlak
Publikováno v:
ECS Transactions. 19:29-40
The requirements and development of high-k dielectric films for application in storage cells of future generation flash and Dynamic Random Access Memory (DRAM) devices are reviewed. Dielectrics with k-value in the 9-30 range are studied as insulators
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26776181d9cfeddefe58078b346e7a09
https://doi.org/10.1149/1.3118928
https://doi.org/10.1149/1.3118928
Autor:
Dirk Wellekens, J. Van Houdt, Pamela René Fischer, J. De Vos, S.R.A. Van Aerde, Ingrid Debusschere, Peter Zagwijn
Publikováno v:
ESSDERC 2008 - 38th European Solid-State Device Research Conference.
When scaling down Floating Gate (FG) based NAND Flash to the 40 nm-technology node and beyond, the main challenge is the electrical interference between adjacent cells. This can be drastically reduced by thinning the FG below 20 nm. For the 43 nm-nod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47b01a93e277e318b8e75721e7b35d1a
https://doi.org/10.1109/essderc.2008.4681714
https://doi.org/10.1109/essderc.2008.4681714