Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Palvan Seyidov"'
Autor:
Palvan Seyidov, Joel B. Varley, Zbigniew Galazka, Ta-Shun Chou, Andreas Popp, Andreas Fiedler, Klaus Irmscher
Publikováno v:
APL Materials, Vol 10, Iss 11, Pp 111109-111109-9 (2022)
Optical absorption and photoconductivity measurements of Co-doped β-Ga2O3 crystals reveal the photon energies of optically excited charge transfer between the Co related deep levels and the conduction or valence band. The corresponding photoionizati
Externí odkaz:
https://doaj.org/article/46235c0c42994bb89ea26edd9cb24222
Autor:
Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Thi Thuy Vi Tran, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Jutta Schwarzkopf, Andreas Popp
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115323-115323-6 (2021)
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm. The main growth pa
Externí odkaz:
https://doaj.org/article/e1255397886d4803b88f3d7b688b2f68
Autor:
Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Klaus Irmscher, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, Wolfram Miller, Palvan Seyidov, Martin Albrecht, Andreas Popp
Publikováno v:
Crystals, Vol 12, Iss 1, p 8 (2021)
In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (01
Externí odkaz:
https://doaj.org/article/56e9788c60c145faa93b69a1274629e3
Autor:
Kornelius Tetzner, Andreas Thies, Palvan Seyidov, Ta-Shun Chou, Jana Rehm, Ina Ostermay, Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Joachim Würfl, Oliver Hilt
Publikováno v:
Journal of Vacuum Science & Technology A. 41
In this work, we analyze the optimum annealing conditions for the activation of Ge-implanted β-Ga2O3 in order to reach low ohmic contact resistances. The experiments involved the use of a pulsed rapid thermal annealing treatment at temperatures betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b78f4c7df017c06fe843d7539e3f7d0
https://doi.org/10.1116/6.0002642
https://doi.org/10.1116/6.0002642
Autor:
Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Klaus Irmscher, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, Wolfram Miller, Palvan Seyidov, Martin Albrecht, Andreas Popp
Publikováno v:
Crystals, Vol 12, Iss 8, p 8 (2022)
Crystals; Volume 12; Issue 1; Pages: 8
Crystals; Volume 12; Issue 1; Pages: 8
In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (01
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::843be74116bf7772d03ffac169732c75
https://www.mdpi.com/2073-4352/12/1/8
https://www.mdpi.com/2073-4352/12/1/8
Autor:
Atul Pandey, Rouven Dreyer, Palvan Seyidov, Chris Koerner, Saban Tirpanci, Binoy Krishna Hazra, Stuart Parkin, Georg Woltersdorf
Publikováno v:
Physical Review B
We study the opto-electric response in metallic wire structures. The aim is to understand the origin of helicity-dependent photoconductivity. For nonmagnetic metals this effect is generally believed to probe spin polarization. Using magnetic wires we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0695d19bc2db51f7350bc42e7eda09f9
https://doi.org/10.1103/physrevb.106.174420
https://doi.org/10.1103/physrevb.106.174420
Autor:
Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Jana Rehm, Thi Thuy Vi Tran, Andreas Fiedler, Kornelius Tetzner, Zbigniew Galazka, Martin Albrecht, Andreas Popp
Publikováno v:
Japanese Journal of Applied Physics. 62:SF1004
Absrtract In this work, we comprehensively investigate the development of unwanted parasitic particles in the MOVPE chamber while growing μm level films. The density of the parasitic particles is found to be pronounced at film thicknesses starting f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13cbd1fa42189c80c3bdb8bbd7642eba
https://doi.org/10.35848/1347-4065/acb360
https://doi.org/10.35848/1347-4065/acb360
Autor:
Zbigniew Galazka, Andreas Fiedler, Andreas Popp, Steffen Ganschow, Albert Kwasniewski, Palvan Seyidov, Mike Pietsch, Andrea Dittmar, Saud Bin Anooz, Klaus Irmscher, Manuela Suendermann, Detlef Klimm, Ta-Shun Chou, Jana Rehm, Thomas Schroeder, Matthias Bickermann
Publikováno v:
Journal of Applied Physics. 133:035702
We have systematically studied the growth, by the Czochralski method, and basic physical properties of a 2 cm and 2 in. diameter bulk β-(AlxGa1−x)2O3 single crystal with [Al] = 0–35 mol. % in the melt in 5 mol. % steps. The segregation coefficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1f9c68c2beaf49705f995a7d5460c2
https://doi.org/10.1063/5.0131285
https://doi.org/10.1063/5.0131285
Autor:
Jana Rehm, Ta-Shun Chou, Saud Bin Anooz, Palvan Seyidov, Andreas Fiedler, Zbigniew Galazka, Andreas Popp
Publikováno v:
Applied Physics Letters. 121:240503
Beta gallium oxide (β-Ga2O3) is a promising ultra-wide bandgap semiconductor with attractive physical properties for next-generation high-power devices, radio frequency electronics, and solar-blind ultraviolet radiation detectors. Here, we present a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3d719c9ee20f5d22cc269be5f3e7720
https://doi.org/10.1063/5.0122886
https://doi.org/10.1063/5.0122886
Autor:
Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, Klaus Irmscher, Palvan Seyidov, Wolfram Miller, Zbigniew Galazka, Martin Albrecht, Andreas Popp
Publikováno v:
Applied Physics Letters. 121:032103
A Langmuir adsorption model of the Si incorporation mechanism into metalorganic vapor-phase epitaxy grown (100) β-Ga2O3 thin films is proposed in terms of the competitive surface adsorption process between Si and Ga atoms. The outcome of the model c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc88e1adeb203bc5617defc7f2bfd7c
https://doi.org/10.1063/5.0096846
https://doi.org/10.1063/5.0096846