Zobrazeno 1 - 10
of 282
pro vyhledávání: '"Palmstrøm, C."'
Autor:
Dempsey, C. P., Dong, J. T., Rodriguez, I. Villar, Gul, Y., Chatterjee, S., Pendharkar, M., Holmes, S. N., Pepper, M., Palmstrøm, C. J.
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. The highest mobility QWs are
Externí odkaz:
http://arxiv.org/abs/2406.19469
Publikováno v:
Phys. Rev. B 110, 035302 (2024)
We present first-principles calculations of Schottky barrier heights (SBHs) at interfaces relevant for silicon-based merged-element transmon qubit devices. Focusing on Al(111)/Si(111) and CoSi$_2$(111)/Si(111), we consider various possible interfacia
Externí odkaz:
http://arxiv.org/abs/2403.13986
Autor:
Jiang, Y., Gupta, M., Riggert, C., Pendharkar, M., Dempsey, C., Lee, J. S., Harrington, S. D., Palmstrøm, C. J., Pribiag, V. S., Frolov, S. M.
Many recipes for realizing topological superconductivity rely on broken time-reversal symmetry, which is often attained by applying a substantial external magnetic field. Alternatively, using magnetic materials can offer advantages through low-field
Externí odkaz:
http://arxiv.org/abs/2305.19970
Autor:
Zhang, B., Li, Z., Wu, H., Pendharkar, M., Dempsey, C., Lee, J. S., Harrington, S. D., Palmstrom, C. J., Frolov, S. M.
Hybrid superconductor-semiconductor materials are fueling research in mesoscopic physics and quantum technology. Recently demonstrated smooth $\beta$-Sn superconductor shells, due to the increased induced gap, are expanding the available parameter sp
Externí odkaz:
http://arxiv.org/abs/2306.00146
Autor:
Chen, A. -H., Dempsey, C. P., Pendharkar, M., Sharma, A., Zhang, B., Tan, S., Bellon, L., Frolov, S. M., Palmstrom, C. J., Bellet-Amalric, E., Hocevar, M.
Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room temperature, as they
Externí odkaz:
http://arxiv.org/abs/2301.12424
We explore vortex dynamics in a two-dimensional Josephson junction array of micron-size superconducting islands fabricated from an epitaxial Al/InAs superconductor-semiconductor heterostructure, with a global top gate controlling Josephson coupling a
Externí odkaz:
http://arxiv.org/abs/2212.08651
Autor:
Zhang, B., Li, Z., Aguilar, V., Zhang, P., Pendharkar, M., Dempsey, C., Lee, J. S., Harrington, S. D., Tan, S., Meyer, J. S., Houzet, M., Palmstrom, C. J., Frolov, S. M.
We study Josephson junctions based on InSb nanowires with Sn shells. We observe skewed critical current diffraction patterns: the maxima in forward and reverse current bias are at different magnetic flux, with a displacement of 20-40 mT. The skew is
Externí odkaz:
http://arxiv.org/abs/2212.00199
Autor:
Zhang, P., Mudi, S., Pendharkar, M., Lee, J. S., Dempsey, C. P., McFadden, A. P., Harrington, S. D., Dong, J. T., Wu, H., Chen, A. -H., Hocevar, M., Palmstrøm, C. J., Frolov, S. M.
Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave
Externí odkaz:
http://arxiv.org/abs/2211.08710
Autor:
Zhang, P., Zarassi, A., Jarjat, L., Van de Sande, V., Pendharkar, M., Lee, J. S., Dempsey, C. P., McFadden, A. P., Harrington, S. D., Dong, J. T., Wu, H., Chen, A. -H., Hocevar, M., Palmstrøm, C. J., Frolov, S. M.
Publikováno v:
SciPost Phys. 16, 030 (2024)
We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephso
Externí odkaz:
http://arxiv.org/abs/2211.07119
Autor:
Zhang, P., Zarassi, A., Pendharkar, M., Lee, J. S., Jarjat, L., Van de Sande, V., Zhang, B., Mudi, S., Wu, H., Tan, S., Dempsey, C. P., McFadden, A. P., Harrington, S. D., Shojaei, B., Dong, J. T., Chen, A. -H., Hocevar, M., Palmstrøm, C. J., Frolov, S. M.
More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction b
Externí odkaz:
http://arxiv.org/abs/2211.04130