Atomistic comparative study of VUV photodeposited silicon nitride on InP(100) by simulation and atomic force microscopy

Autor: Flicstein, J. ^*, Guillonneau, E., Marquez, J., How Kee Chun, L.S., Maisonneuve, D., David, C., Wang, Zh., Palmier, J.F., Courant, J.L.

Publikováno v: In Applied Surface Science 2000 154:337-344

Modeling and dynamic simulation of ultraviolet induced growing interfaces

Autor: Flicstein, J ^*, Guillonneau, E, Pata, S, Kee Chun, L.S, Palmier, J.F, Daguet, C, Courant, J.L

Publikováno v: In Applied Surface Science 1999 138:394-400

MOCVD growth assessment of the first all monolithic 1.56 /spl mu/m VCSELs with GaInAlAs/InP system.

Autor: Sagnes, I., Le Roux, G., Legay, P., Kazmierski, C., Palmier, J.F., Debray, J.P.

Publikováno v: Conference Proceedings Eleventh International Conference on Indium Phosphide & Related Materials (IPRM'99) (Cat No99CH36362); 1999, p539-542, 4p

Self-consistent Calculation Of Electron States In III-V Multilayer Structures.

Autor: Zimmermann, B., Palmier, J.F., Caussignac, P., Ilegerns, M.

Publikováno v: 1987 NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices & Integrated Circuits; 1987, p346-351, 6p

Millimetre-wave negative differential conductance in GaInAs/AlInAs semiconductor superlattices

Autor: Minot, C., Sahri, N., Le Person, H., Palmier, J.F., Harmand, J.C., Medus, J.P., Esnault, J.C.

Publikováno v: Superlattices and Microstructures; June 1998, Vol. 23 Issue: 6 p1323-1332, 10p