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pro vyhledávání: '"Palla K. Bhattacharya"'
Publikováno v:
Journal of Crystal Growth. 150:984-988
Epitaxy of silicon using a non-Maxwellian beam source is demonstrated. Pulses of monoenergetic, high kinetic energy supersonic beams of a Si 2 H 6 -H 6 mixture are directed at the substrate leading to epitaxial growth. Reflection high energy electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49edb93c191af19bebf9b1b087dfd778
https://doi.org/10.1016/0022-0248(95)80087-s
https://doi.org/10.1016/0022-0248(95)80087-s
