Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO 2 matrix.

Autor: Dascalescu I; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania., Palade C; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania., Slav A; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania., Stavarache I; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania., Cojocaru O; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania., Teodorescu VS; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania.; Academy of Romanian Scientists, 54 Splaiul Independentei, 050094, Bucharest, Romania., Maraloiu VA; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania., Lepadatu AM; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania. lepadatu@infim.ro., Ciurea ML; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania. ciurea@infim.ro.; Academy of Romanian Scientists, 54 Splaiul Independentei, 050094, Bucharest, Romania. ciurea@infim.ro., Stoica T; National Institute of Materials Physics, 405A Atomistilor Street, 077125, Magurele, Romania. toma.stoica@infim.ro.

Publikováno v: Scientific reports [Sci Rep] 2024 Feb 12; Vol. 14 (1), pp. 3532. Date of Electronic Publication: 2024 Feb 12.

Subarachnoid hemorrhage and cerebral vasospasm – Literature review.

Autor: Ciurea, A. V.¹, Palade, C.¹ claudiu_palade@yahoo.com, Voinescu, D.², Nica, D. A.³

Publikováno v: Journal of Medicine & Life. Apr-Jun2013, Vol. 6 Issue 2, p120-125. 6p.

Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix.

Autor: Dascalescu, Ioana¹ (AUTHOR), Palade, Catalin¹ (AUTHOR), Slav, Adrian¹ (AUTHOR), Stavarache, Ionel¹ (AUTHOR), Cojocaru, Ovidiu¹ (AUTHOR), Teodorescu, Valentin Serban^1,2 (AUTHOR), Maraloiu, Valentin-Adrian¹ (AUTHOR), Lepadatu, Ana-Maria¹ (AUTHOR) lepadatu@infim.ro, Ciurea, Magdalena Lidia^1,2 (AUTHOR) ciurea@infim.ro, Stoica, Toma¹ (AUTHOR) toma.stoica@infim.ro

Publikováno v: Scientific Reports. 2/16/2024, Vol. 14 Issue 1, p1-11. 11p.

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Graphene/Ferroelectric (Ge-Doped HfO 2 ) Adaptable Transistors Acting as Reconfigurable Logic Gates.

Autor: Dragoman M; National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126A, 077190 Voluntari, Romania., Dinescu A; National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126A, 077190 Voluntari, Romania., Dragoman D; Faculty of Physics, Univ. of Bucharest, P.O. Box MG-11, 077125 Magurele, Romania.; Academy of Romanian Scientists, Str. Ilfov 3, 050094 Bucharest, Romania., Palade C; National Institute of Materials Physics, Str. Atomistilor 405 A, 077125 Magurele, Romania., Teodorescu VŞ; Academy of Romanian Scientists, Str. Ilfov 3, 050094 Bucharest, Romania.; National Institute of Materials Physics, Str. Atomistilor 405 A, 077125 Magurele, Romania., Ciurea ML; Academy of Romanian Scientists, Str. Ilfov 3, 050094 Bucharest, Romania.; National Institute of Materials Physics, Str. Atomistilor 405 A, 077125 Magurele, Romania.

Publikováno v: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 Jan 17; Vol. 12 (2). Date of Electronic Publication: 2022 Jan 17.