Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Pala Balasubramaniam"'
Autor:
James Blatchford, Pala Balasubramaniam, Ravi M. Todi, Sushama Davar, Shibly S. Ahmed, Navneet Jain, Juhan Kim, Mahbub Rashed
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
Advanced Technology Development requires detailed and extensive Design and Technology Co-optimization (DTCO), from device to design to application, to balance system-dependent Power, Performance and Area (PPA) with manufacturability of the technology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::668338058f5f9390630d1e29d22d1a6e
https://doi.org/10.1109/edtm.2018.8421508
https://doi.org/10.1109/edtm.2018.8421508
Autor:
Ram Asra, Francis Benistant, Haojun Zhang, Edmund Banghart, Linjun Cao, Shesh Mani Pandey, Pei Zhao, Manfred Eller, Kenta Yamada, Pala Balasubramaniam, Xiaoli He, Srikanth Samavedam, Vinayak Mahajan, Manoj Joshi, Baofu Zhu
Publikováno v:
2017 Symposium on VLSI Technology.
In this paper, we present a new local layout effect in 14nm FinFET due to different CT layout designs (CT extension, CT spacing, and PC past RX distance). Based on 14nm FinFET experimental data, the CT LLE effect induces up to 50mV Vtsat shift, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1c082b227235676664442426f3c9a99
https://doi.org/10.23919/vlsit.2017.7998182
https://doi.org/10.23919/vlsit.2017.7998182