Zobrazeno 1 - 10
of 103
pro vyhledávání: '"Pakes, C. I."'
Autor:
Tsai, A., Aghajamali, A., Dontschuk, N., Johnson, B. C., Usman, M., Schenk, A. K., Sear, M., Pakes, C. I., Hollenberg, L. C. L., McCallum, J. C., Rubanov, S., Tadich, A., Marks, N. A., Stacey, A.
We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM)
Externí odkaz:
http://arxiv.org/abs/2002.07314
Publikováno v:
Review of Scientific Instruments; Oct2024, Vol. 95 Issue 10, p1-8, 8p
Publikováno v:
Nanotechnology 20 (2009) 465302
Making use of focused Ga-ion beam (FIB) fabrication technology, the evolution with device dimension of the low-temperature electrical properties of Nb nanowires has been examined in a regime where crossover from Josephson-like to insulating behaviour
Externí odkaz:
http://arxiv.org/abs/1003.5430
Autor:
Buehler, T. M., Chan, V., Ferguson, A. J., Dzurak, A. S., Hudson, F. E., Reilly, D. J., Hamilton, A. R., Clark, R. G., Jamieson, D. N., Yang, C., Pakes, C. I., Prawer, S.
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bi
Externí odkaz:
http://arxiv.org/abs/cond-mat/0506594
Publikováno v:
Physical Review B 69, 233301 (2004)
In the design of quantum computer architectures that take advantage of the long coherence times of dopant nuclear and electron spins in the solid-state, single-spin detection for readout remains a crucial unsolved problem. Schemes based on adiabatica
Externí odkaz:
http://arxiv.org/abs/quant-ph/0402077
Autor:
Kettle, L. M., Goan, H. S., Smith, Sean C., Wellard, C. J., Hollenberg, L. C. L., Pakes, C. I.
Publikováno v:
Phys. Rev. B 68, 075317 (2003)
In this paper we examine the effects of varying several experimental parameters in the Kane quantum computer architecture: A-gate voltage, the qubit depth below the silicon oxide barrier, and the back gate depth to explore how these variables affect
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308124
Autor:
Dzurak, A. S., Hollenberg, L. C. L., Jamieson, D. N., Stanley, F. E., Yang, C., Buhler, T. M., Chan, V., Reilly, D. J., Wellard, C., Hamilton, A. R., Pakes, C. I., Ferguson, A. G., Gauja, E., Prawer, S., Milburn, G. J., Clark, R. G.
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart, one of which
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306265
Autor:
Clark, R. G., Brenner, R., Buehler, T. M., Chan, V., Curson, N. J., Dzurak, A. S., Gauja, E., Goan, H. S., Greentree, A. D., Hallam, T., Hamilton, A. R., Hollenberg, L. C. L., Jamieson, D. N., McCallum, J. C., Milburn, G. J., O'Brien, J. L., Oberbeck, L., Pakes, C. I., Prawer, S. D., Reilly, D. J., Ruess, F. J., Schofield, S. R., Simmons, M. Y., Stanley, F. E., Starrett, R. P., Wellard, C., Yang, C.
Publikováno v:
Philosophical Transactions: Mathematical, Physical and Engineering Sciences, 2003 Jul . 361(1808), 1451-1471.
Externí odkaz:
https://www.jstor.org/stable/3559252
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Akademický článek
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