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pro vyhledávání: '"Pai-Yong Wang"'
Autor:
Pai-Yong Wang, 王派湧
87
The transition of carrier distribution from the strained to relaxed state in In0.2Ga0.8As/GaAs quantum well is studied by capacitance-voltage measurement. There is two-dimensional carrier confinement in the In0.2Ga0.8As quantum well with well
The transition of carrier distribution from the strained to relaxed state in In0.2Ga0.8As/GaAs quantum well is studied by capacitance-voltage measurement. There is two-dimensional carrier confinement in the In0.2Ga0.8As quantum well with well
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/83173881463920739564
Autor:
Pai-Yong Wang, 王派湧
82
We used the metal organic chemical vapor deposition epitaxial in atmospheric pressure to study the growth of GaSb and AlGaSb on GaAs substrates and the current transport properties in GaSb/ AlXGa1-XSb/GaSb structures. In GaSb growth,the growt
We used the metal organic chemical vapor deposition epitaxial in atmospheric pressure to study the growth of GaSb and AlGaSb on GaAs substrates and the current transport properties in GaSb/ AlXGa1-XSb/GaSb structures. In GaSb growth,the growt
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/64341494686902255280
Autor:
Li-Wei Sung, Xing-Jian Guo, Fei-Chang Hwang, Yi-Tsuo Wu, Wen-Chang Jiang, Chiu-Yueh Liang, Ferng-Jye Lay, Cheng-Zu Wu, Hao-Hsiung Lin, Pai-Yong Wang, Chin-An Chang
Publikováno v:
Journal of Crystal Growth. 225:550-555
InAs quantum dots were formed by depositing monolayers of InAs on GaAs, covered with InGaAs, and flanged with GaAs barriers. This formed a single quantum well in the present study, as grown by molecular-beam epitaxy. Both multiple quantum wells (MQW)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f6cea5956425d6ad03bd2316b746866
https://doi.org/10.1016/s0022-0248(01)00951-4
https://doi.org/10.1016/s0022-0248(01)00951-4
Publikováno v:
Journal of Crystal Growth. 223:92-98
Multiple quantum wells (MQW) and laser-containing InAs quantum dots were grown on GaAs using molecularbeam epitaxy. For the MQW, the wells consisted of monolayers of InAs covered by In0.15Ga0.85As, with the barrier layers being GaAs. The photolumines
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::983211db40dea429e0a1348e1016be31
https://doi.org/10.1016/s0022-0248(00)01019-8
https://doi.org/10.1016/s0022-0248(00)01019-8
Publikováno v:
Japanese Journal of Applied Physics. 43:L1150
The electrical and optical properties of the defect traps, with and without annealing, in InAs/GaAs quantum dots (QDs) emitting at 1.3 µm are investigated by capacitance-voltage (C-V), deep-level transient spectroscopy (DLTS) and photoluminescence (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff54ca8c3d0273c623b59bae8ceca974
https://doi.org/10.1143/jjap.43.l1150
https://doi.org/10.1143/jjap.43.l1150
Publikováno v:
Japanese Journal of Applied Physics. 39:1102
Capacitance dispersion over frequency is investigated for relaxed In0.2Ga0.8As/GaAs Schottky diodes. While the high-frequency capacitance is voltage-independent, the low-frequency capacitance is seen to decrease with reverse voltage. Based on a Schot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22688504013f60ba366e8f60408cae66
https://doi.org/10.1143/jjap.39.1102
https://doi.org/10.1143/jjap.39.1102
Publikováno v:
Japanese Journal of Applied Physics. 39:227
Admittance spectroscopy is used to study a molecular-beam epitaxially grown GaAs n+-p diode with 100-Å-thick AlAs immersed in the lightly doped p-region. The measurements clearly show two trapping effects. Upon comparison with the reference sample w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66a34bad40b7f9bc44a2b68479bca4bc
https://doi.org/10.1143/jjap.39.227
https://doi.org/10.1143/jjap.39.227
Publikováno v:
Japanese Journal of Applied Physics. 38:L1425
The electrical properties of annealed low-temperature GaAs are studied by investigating the frequency-dependent capacitance of n-LT-i-p structures with the low-temperature (LT) layers grown at different temperatures. Relative to the sample grown at 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d8b80295cf1ab24e57b596591c3c1b1
https://doi.org/10.1143/jjap.38.l1425
https://doi.org/10.1143/jjap.38.l1425
Publikováno v:
Japanese Journal of Applied Physics. 37:L1238
Deep-level transient spectroscopy and transient capacitance measurements are performed on a molecular-beam-epitaxially grown GaAs n-i-p diode with a 2000-Å-thick low-temperature (LT)-grown layer immersed in its intrinsic region. The transient capaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1c38a9a68789bc18af677a4761ab28
https://doi.org/10.1143/jjap.37.l1238
https://doi.org/10.1143/jjap.37.l1238
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