Zobrazeno 1 - 10
of 525
pro vyhledávání: '"Paget, D"'
Autor:
Hijazi, H., Paget, D., Rowe, A C. H., Monier, G., Lahlil, K., Gil, E., Trassoudaine, A., Cadiz, F., André, Y., Robert-Goumet, C.
We have used a polarized microluminescence technique to investigate photocarrier charge and spin transport in n-type depleted GaAs nanowires ($ \approx 10^{17}$ cm$^{-3}$ doping level). At 6K, a long-distance tail appears in the luminescence spatial
Externí odkaz:
http://arxiv.org/abs/2112.11038
Autor:
Cadiz, F., Robert, C., Courtade, E., Manca, M., Martinelli, L., Taniguchi, T., Watanabe, K., Amand, T., Rowe, A. C. H., Paget, D., Urbaszek, B., Marie, X.
We have combined spatially-resolved steady-state micro-photoluminescence ($\mu$PL) with time-resolved photoluminescence (TRPL) to investigate the exciton diffusion in a WSe$_2$ monolayer encapsulated with hexagonal boron nitride (hBN). At 300 K, we e
Externí odkaz:
http://arxiv.org/abs/1802.09201
Autor:
Mehdi, H., Réveret, F., Robert-Goumet, C., Bideux, L., Gruzza, B., Hoggan, P.E., Leymarie, J., Andre, Y., Gil, E., Pelissier, B., Levert, T., Paget, D., Monier, G.
Publikováno v:
In Applied Surface Science 30 March 2022 579
Autor:
Cadiz, F., Lagarde, D., Renucci, P., Paget, D., Amand, T., Carrère, H., Rowe, A. C. H., Arscott, S.
Carrier and spin recombination are investigated in p-type GaAs of acceptor concentration NA = 1.5 x 10^(17) cm^(-3) using time-resolved photoluminescence spectroscopy at 15 K. At low pho- tocarrier concentration, acceptors are mostly neutral and phot
Externí odkaz:
http://arxiv.org/abs/1611.07406
Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to the prece
Externí odkaz:
http://arxiv.org/abs/1611.07340
A novel spin-spin coupling mechanism that occurs during the transport of spin-polarized minority electrons in semiconductors is described. Unlike the Coulomb spin drag, this coupling arises from the ambipolar electric field which is created by the di
Externí odkaz:
http://arxiv.org/abs/1507.03347
The effect of an electric field on the spatial charge and spin profiles of photoelectrons in p+-GaAs is studied as a function of lattice and electron temperature. The charge and spin mobilities of photoelectrons are equal in all conditions and exhibi
Externí odkaz:
http://arxiv.org/abs/1506.02055
Publikováno v:
Phys. Rev. Lett. 111, 246601 (2013)
Spin-polarized transport of photo-electrons in bulk, p-type GaAs is investigated in the Pauli blockade regime. In contrast to usual spin diffusion processes in which the spin polarization decreases with distance traveled due to spin relaxation, image
Externí odkaz:
http://arxiv.org/abs/1309.6451
Autor:
Sallen, G., Kunz, S., Amand, T., Bouet, L., Kuroda, T., Mano, T., Paget, D., Krebs, O., Marie, X., Sakoda, K., Urbaszek, B.
Publikováno v:
Nature Communications 5, Article number: 3268 (2014) open
Optical and electrical control of the nuclear spin system allows enhancing the sensitivity of NMR applications and spin-based information storage and processing. Dynamic nuclear polarization in semiconductors is commonly achieved in the presence of a
Externí odkaz:
http://arxiv.org/abs/1309.1288
In p+ GaAs thin films, the effect of photoelectron degeneracy on spin transport is investigated theoretically and experimentally by imaging the spin polarization profile as a function of distance from a tightly-focussed light excitation spot. Under d
Externí odkaz:
http://arxiv.org/abs/1307.1549