Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach.

Autor: Spelta, Tarek, Veillerot, Marc, Martinez, Eugénie, Chevalier, Nicolas, Mariolle, Denis, Templier, Roselyne, Salem, Bassem, Paes Pinto Rocha, Pedro Fernandes, Vauche, Laura, Boubenia, Sarah, Hyot, Bérangère

Publikováno v: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2023, Vol. 41 Issue 3, p1-6, 6p