Zobrazeno 1 - 10
of 209
pro vyhledávání: '"Pacherova O"'
Autor:
Kovaleva, N. N., Chvostova, D., Pacherova, O., Muratov, A. V., Fekete, L., Sherstnev, I. A., Kugel, K. I., Pudonin, F. A., Dejneka, A.
Publikováno v:
Published in Appl. Phys. Lett. 119, 183101 (2021)
Using wide-band (0.5-6.5 eV) spectroscopic ellipsometry we study ultrathin [Bi(0.6-2.5 nm)-FeNi(0.8,1.2 nm)]N multilayer films grown by rf sputtering deposition, where the FeNi layer has a nanoisland structure and its morphology and magnetic properti
Externí odkaz:
http://arxiv.org/abs/2301.05103
Autor:
Kovaleva, N. N., Chvostova, D., Pacherova, O., Fekete, L., Kugel, K. I., Pudonin, F. A., Dejneka, A.
Publikováno v:
Appl. Phys. Lett. 111, 183104 (2017)
Using dc transport and wide-band spectroscopic ellipsometry techniques, we study localization effects in the disordered metallic Ta interlayer of different thickness in the multilayer films (MLFs) (Ta - FeNi)_N grown by rf sputtering deposition. In t
Externí odkaz:
http://arxiv.org/abs/2112.11342
Autor:
Kovaleva, N. N., Kusmartsev, F. V., Mekhiya, A. B., Trunkin, I. N., Chvostova, D., Davydov, A. B., Oveshnikov, L. N., Pacherova, O., Sherstnev, I. A., Kusmartseva, A., Kugel, K. I., Dejneka, A., Pudonin, F. A., Luo, Y., Aronzon, B. A.
Publikováno v:
Scientific Reports (2020)10:21172
Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to s
Externí odkaz:
http://arxiv.org/abs/2008.09779
Autor:
Vetokhina V; Institute of Physics of the Czech Academy of Sciences Na Slovance 2 18221 Prague Czech Republic., Nepomniashchaia N; Institute of Physics of the Czech Academy of Sciences Na Slovance 2 18221 Prague Czech Republic., de Prado E; Institute of Physics of the Czech Academy of Sciences Na Slovance 2 18221 Prague Czech Republic., Pacherova O; Institute of Physics of the Czech Academy of Sciences Na Slovance 2 18221 Prague Czech Republic., Kocourek T; Institute of Physics of the Czech Academy of Sciences Na Slovance 2 18221 Prague Czech Republic., Anandakrishnan SS; Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu P. O. Box 4500 FI-90014 Oulu Finland marina.tjunina@oulu.fi., Bai Y; Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu P. O. Box 4500 FI-90014 Oulu Finland marina.tjunina@oulu.fi., Dejneka A; Institute of Physics of the Czech Academy of Sciences Na Slovance 2 18221 Prague Czech Republic., Tyunina M; Institute of Physics of the Czech Academy of Sciences Na Slovance 2 18221 Prague Czech Republic.; Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu P. O. Box 4500 FI-90014 Oulu Finland marina.tjunina@oulu.fi.
Publikováno v:
Materials advances [Mater Adv] 2024 Oct 15; Vol. 5 (22), pp. 8901-8908. Date of Electronic Publication: 2024 Oct 15 (Print Publication: 2024).
Autor:
Kamba, S., Goian, V., Skoromets, V., Hejtmanek, J., Bovtun, V., Kempa, M., Borodavka, F., Vanek, P., Belik, A. A., Lee, J. H., Pacherova, O., Rabe, K. M.
Publikováno v:
Phys. Rev. B 89, 064308 (2014)
Infrared reflectivity spectra of cubic SrMnO$_{3}$ ceramics reveal 18 % stiffening of the lowest-frequency phonon below the antiferromagnetic phase transition occurring at T$_{N}$ = 233 K. Such a large temperature change of the polar phonon frequency
Externí odkaz:
http://arxiv.org/abs/1402.2165
Autor:
Goian, V., Kamba, S., Pacherova, O., Drahokoupil, J., Palatinus, L., Dusek, M., Rohlicek, J., Savinov, M., Laufek, F., Schranz, W., Fuith, A., Kachlik, M., Maca, K., Shkabko, A., Sagarna, L., Weidenkaff, A., Belik, A. A.
X-ray diffraction, dynamical mechanical analysis and infrared reflectivity studies revealed an antiferrodistortive phase transition in EuTiO3 ceramics. Near 300K the perovskite structure changes from cubic Pm-3m to tetragonal I4/mcm due to antiphase
Externí odkaz:
http://arxiv.org/abs/1206.4137
Autor:
Kopecky, M., Kub, J., Maca, F., Masek, J., Pacherova, O., Gallagher, B. L., Campion, R. P., Novak, V., Jungwirth, T.
We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11)
Externí odkaz:
http://arxiv.org/abs/1012.4690
Publikováno v:
Scientific Reports. 7/27/2021, Vol. 11 Issue 1, p1-6. 6p.
A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609163
Autor:
Smrčka, L., Vašek, P., Svoboda, P., Goncharuk, N. A., Pacherová, O., Krupko, Yu., Sheikin, Y.
Publikováno v:
Physica E 34 (2006) 632-635
The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic field
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510387