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Autor: Skorupa, W., Heera, V., Pacaud, Y., Weishart, H.

Publikováno v: Nuclear Instruments and Methods in Physics Research B 120 (1996) 114-120

A short review is presented concerning problems of ion beam processing of single crystalline silicon carbide. Emphasis is given to recent results on point defect, extended defects, amorphization and recrystallization, electrical activation of dopant

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::65a3bc9ba05ff387a0d39059960937c2
https://www.hzdr.de/publications/Publ-553-2

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Conference

Damage behaviour and annealing of germanium implanted 6H-SiC.

Autor: Pacaud, Y., Hera, V., Yankov, R.A., Kogler, R., Brauer, G., Voelskow, M., Skorupa, W., Stoemenos, J., Perez-Rodriguez, A., Calvo-Barrio, L., Serre, C., Morante, J.R., Barklie, R., Collins, M., Holm, B.

Publikováno v: Proceedings of 11th International Conference on Ion Implantation Technology; 1996, p713-716, 4p

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Conference

Ion-beam-induced amorphization and recrystallization processes in SiC: Raman-scattering analysis.

Autor: Perez-Rodriguez, Alejandro, Serre, Christoph, Calvo-Barrio, L., Romano-Rodriguez, A., Morante, Juan R., Pacaud, Y., Koegler, R., Skorupa, Wolfgang

Publikováno v: Proceedings of SPIE; Nov1995, Issue 1, p481-494, 14p

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Conference

Convergence of pair gain systems and switch remote access terminals in a fiber network.

Autor: Terreault, R.C., Pacaud, Y., Plouffe, M., Di Michele, A.

Publikováno v: International Symposium on Switching; 1990, Issue 5, p73-78, 6p

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Akademický článek

An EPR study of defects induced in 6H-SiC by ion implantation.

Autor: Barklie, R., Collins, M., Holm, B., Pacaud, Y., Skorupa, W.

Publikováno v: Journal of Electronic Materials; Mar1997, Vol. 26 Issue 3, p137-143, 7p

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Akademický článek

Analysis of ion beam induced damage and amorphization of 6H-SiC by raman scattering.

Autor: Pérez-Rodríguez, A., Pacaud, Y., Calvo-Barrio, L., Serre, C., Skorupa, W., Morante, J.

Publikováno v: Journal of Electronic Materials; Mar1996, Vol. 25 Issue 3, p541-547, 7p

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Periodical

Microstructural characterization of amorphized and recrystallized 6H-SiC

Autor: Pacaud, Y., Skorupa, W., Stoemenos, J.

Publikováno v: Nuclear Instruments and Methods in Physics Research Section B; 1996, Vol. 120 Issue: 1 p181-185, 5p

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