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pro vyhledávání: '"Pablo Rodriguez de Mora"'
Publikováno v:
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).
This paper explores the turn-off switching behavior of a third-generation SiC MOSFET encapsulated in a TO-247-4 package. The work is focused on the selection of the optimal gate resistance to reduce the turn-off switching losses. The selection criter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccd3b0f165230bbbda230e644ab01cef
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215810
https://doi.org/10.23919/epe20ecceeurope43536.2020.9215810
