Zobrazeno 1 - 10
of 293
pro vyhledávání: '"PROLITH"'
Autor:
Sikun Li, Zhu Boer, Heng Zhang, Feng Tang, Fengzhao Dai, Lifeng Duan, Zejiang Meng, Xiangzhao Wang
Publikováno v:
Optics Communications. 431:158-166
A high-order wavefront aberration (HWA) measurement method for a hyper-NA lithographic projection lens based on a binary target with eight directions and rotated regression matrix is proposed. A linear model between the aerial image intensity distrib
Autor:
Inhwan Lee, Trey Graves, John J. Biafore, David Blankenship, Stewart A. Robertson, Mijung Lim, Alessandro Vaglio Pret
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2018.
We evaluate through simulations and experimental data the impact of process non-idealities with a particular attention to mask CD uniformity for 44 nm pitch DRAM contact hole array. Several millions of contact holes are simulated with PROLITH after f
Autor:
Michael P. Chrisp, Lalitha Parameswaran, Melissa A. Smith, Noah W. Siegel, Ronald B. Lockwood, Daniel Z. Freeman, Mordechai Rothschild, Christopher Holtsberg, Shaun Berry
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 18:1
Grayscale lithography is a widely known but underutilized microfabrication technique for creating three-dimensional (3-D) microstructures in photoresist. One of the hurdles for its widespread use is that developing the grayscale photolithography mask
Autor:
Yoshihisa Sensu, Yoko Matsumoto, Makoto Hanabata, Satoshi Takei, Hatsuyuki Tanaka, Atsushi Sekiguchi
Publikováno v:
SPIE Proceedings.
Novolak resists have been widely used in IC production and are used to this day in the production of flat panel displays (FPDs) and MEMS. However, with the advent of high-definition devices, FPDs must meet growing requirements for finer dimensions. T
Publikováno v:
SPIE Proceedings.
Vote-taking lithography sums up N mask images, each at 1/N dose, to mitigate the mask defects on each individual mask. The fundamental assumption is that the mask defects do not correlate in position from mask to mask, and so each individual defect w
Publikováno v:
SPIE Proceedings.
As the fin based field effect transistors (Fin-FET) emerge, the device structure is changed from two dimensional to three dimensional. Due to the existence of topography, the lithographic performance may be affected and, in most cases, becomes more c
Autor:
Vipul Jain, James F. Cameron, Michael Wagner, James W. Thackeray, Paul J. LaBeaume, Aaron A. Rachford, Owendi Ongayi, Suzanne Coley, John J. Biafore
Publikováno v:
Journal of Photopolymer Science and Technology. 26:605-610
This paper describes Dow’s efforts toward improved Critical Dimensional Uniformity (CDU) in EUV resists. Many non-material related factors contribute to good CDU, such as aerial image quality. We have focused on fundamental resist properties like i
Publikováno v:
Applied optics. 55(12)
A wavefront aberration measurement method for a hyper-NA lithographic projection lens by use of an aerial image based on principal component analysis is proposed. Aerial images of the hyper-NA lithographic projection lens are expressed accurately by
Autor:
Hatsuyuki Tanaka, Satoshi Takei, Yoshihisa Sensu, Atsushi Sekiguchi, Yoko Matsumoto, Toshiyuki Horiuchi, Makoto Hanabata
Publikováno v:
SPIE Proceedings.
Novolak resists have been widely used in IC production and are still used in the production of flat panel displays (FPDs) and MEMS. However, with the advent of high-definition products, FPDs increasingly face requirements for finer dimensions. These
Publikováno v:
SPIE Proceedings.
A new focus monitor mask having novel grating structure is proposed to measure the focus variation of the scanner. The grating pattern composes of transparent line, opaque line, π-phase shift groove and π/2 -phase shift groove with their width rati