Zobrazeno 1 - 2
of 2
pro vyhledávání: '"PMOS degradation"'
Publikováno v:
2016 Annual Reliability and Maintainability Symposium (RAMS)
2016 Annual Reliability and Maintainability Symposium (RAMS), Jan 2016, Tucson, United States. pp.7448024, ⟨10.1109/RAMS.2016.7448024⟩
2016 Annual Reliability and Maintainability Symposium (RAMS), 2016, Tucson, United States. pp.7448024, ⟨10.1109/RAMS.2016.7448024⟩
2016 Annual Reliability and Maintainability Symposium (RAMS), Jan 2016, Tucson, United States. pp.7448024, ⟨10.1109/RAMS.2016.7448024⟩
2016 Annual Reliability and Maintainability Symposium (RAMS), 2016, Tucson, United States. pp.7448024, ⟨10.1109/RAMS.2016.7448024⟩
International audience; Reliability simulation is an area of increasing interest as it allows the design of circuits that are both reliable and optimized for circuit performance by transient device degradation calculations. In this paper, Hot Carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30ca46da6029982430555eb1fa73a0dd
https://normandie-univ.hal.science/hal-02184712
https://normandie-univ.hal.science/hal-02184712
Conference
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