Zobrazeno 1 - 10
of 3 194
pro vyhledávání: '"PLOOG K"'
Publikováno v:
Appl. Phys. Lett. 89, 051915 (2006)
The phase transition near 40~$^{\circ }$C of both as-grown thin epitaxial MnAs films prepared by molecular beam epitaxy on GaAs(001) and nanometer-scale disks fabricated from the same films is studied. The disks are found to exhibit a pronounced hyst
Externí odkaz:
http://arxiv.org/abs/1907.07027
Autor:
Poux, A., Wasilewski, Z. R., Friedland, K. J., Hey, R., Ploog, K. H., Airey, R., Plochocka, P., Maude, D. K.
Publikováno v:
Phys. Rev. B 94, 075411 (2016)
Intra Landau level thermal activation, from localized states in the tail, to delocalized states above the mobility edge in the same Landau level, explains the $B_c(T)$ (half width of the dissipationless state) phase diagram for a number of different
Externí odkaz:
http://arxiv.org/abs/1609.00485
Autor:
Moreno, M., Ploog, K. H.
In a recent Letter [Phys. Rev. Lett. 107, 187203 (2011)], Fujii et al. reported Mn 2p photoelectron emission spectra for (Ga,Mn)As recorded using hard x-rays. Due to the enhanced bulk sensitivity, hard-x-ray spectra reveal an extra "low-binding-energ
Externí odkaz:
http://arxiv.org/abs/1204.2987
Autor:
Moreno, M., Ploog, K. H.
The approximate location in the Zaanen-Sawatzky-Allen diagram of the phase-separated (Ga,Mn)As material, consisting of MnAs nanoclusters embedded in GaAs, is determined on the basis of configuration-interaction (CI) cluster-model analysis of their Mn
Externí odkaz:
http://arxiv.org/abs/1108.1166
Publikováno v:
Phys. Rev. B 82, 045117 (2010)
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001) and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configuration-interaction analyses based on a cluster model sh
Externí odkaz:
http://arxiv.org/abs/1003.1063
Autor:
Wrobel, J., Zagrajek, P., Czapkiewicz, M., Bek, M., Sztenkiel, D., Fronc, K., Hey, R., Ploog, K. H., Bulka, B. R.
We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data.
Externí odkaz:
http://arxiv.org/abs/0912.2004
Publikováno v:
Phys. Rev. B 79, 205320 (2009)
We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, $\nu$. At large-$\nu$, the dark study indicates several distinct phase relations ("Type-1", "Type-2", and
Externí odkaz:
http://arxiv.org/abs/0906.0032
Long coherence lifetimes of electron spins transported using moving potential dots are shown to result from the mesoscopic confinement of the spin vector. The confinement dimensions required for spin control are governed by the characteristic spin-or
Externí odkaz:
http://arxiv.org/abs/0707.1047
Autor:
Piot, B. A., Maude, D. K., Henini, M., Wasilewski, Z. R., Gupta, J. A., Friedland, K. J., Hey, R., Ploog, K. H., Gennser, U., Cavanna, A., Mailly, D., Airey, R., Hill, G.
Publikováno v:
Phys. Rev. B 75, 155332 (2007)
In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner
Externí odkaz:
http://arxiv.org/abs/0705.0129
Autor:
Friedland, K. -J., Hey, R., Kostial, H., Jahn, U., Wiebicke, E., Ploog, K. H., Vorob'ev, A., Yukecheva, Ju., Prinz, V.
We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic fields along the current path. A strong asymmetry in the
Externí odkaz:
http://arxiv.org/abs/cond-mat/0703665