Zobrazeno 1 - 3
of 3
pro vyhledávání: '"PJ René van Veldhoven"'
Autor:
Alessandro Cavalli, Epam Erik Bakkers, Lu Gao, Marcel A. Verheijen, Jem Jos Haverkort, Sebastien Plissard, PJ René van Veldhoven, Tran Thanh Thuy Vu, J Jia Wang, Y Yingchao Cui, M. Trainor
Publikováno v:
Nano Letters, 13(9), 4113-4117. American Chemical Society
We demonstrate an efficiency enhancement of an InP nanowire (NW) axial p-n junction solar cell by cleaning the NW surface. NW arrays were grown with in situ HCl etching on an InP substrate patterned by nanoimprint lithography, and the NWs surfaces we
Autor:
R Richard Nötzel, Biswarup Satpati, YS Yok-Siang Oei, MK Meint Smit, TJ Tom Eijkemans, S Sanguan Anantathanasarn, EJ Erik Jan Geluk, Achim Trampert, Fwm Frank van Otten, Eajm Erwin Bente, Tjibbe de Vries, PJ René van Veldhoven, JH Joachim Wolter, Yohan Barbarin, E Barry Smalbrugge
Publikováno v:
Journal of Applied Physics, 45(8B), 6544-6549. American Institute of Physics
Wavelength-tunable InAs quantum dots (QDs) embedded in lattice-matched InGaAsP on InP(100) substrates are grown by metalorganic vapor-phase epitaxy (MOVPE). As/P exchange, which causes a QD size and an emission wavelength that are very large, is supp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b5d037c813f07adf6b4c048d08e50c8c
https://research.tue.nl/nl/publications/e83b0c3a-7150-449f-b4ce-e0087d915cde
https://research.tue.nl/nl/publications/e83b0c3a-7150-449f-b4ce-e0087d915cde
Autor:
E Barry Smalbrugge, Hao Wang, R Richard Nötzel, Tjibbe de Vries, PJ René van Veldhoven, J Jiayue Yuan, EJ Erik Jan Geluk
Publikováno v:
Journal of Applied Physics, 108(10):104308, 104308-1/4. American Institute of Physics
Position-controlled InAs quantum dots (QDs) are integrated into planar InP structures by employing selective area growth of InP pyramids and regrowth by metalorganic vapor-phase epitaxy. A smooth surface morphology is obtained at elevated regrowth te