Butt-coupling loss of 0.1 dB/interface in InP/InGaAs multiple-quantum-well waveguide-waveguide structures grown by selective area chemical beam epitaxy

Autor: JH Joachim Wolter, PJ Harmsma, C. A. Verschuren, M.R. Leys, H Vonk, Ys Oei

Publikováno v: Semiconductor Science and Technology. 13:A169-A172

The lateral coupling of waveguiding structures in both [011] and [011] directions is studied using embedded selective area epitaxy by chemical beam epitaxy. All growth steps are carried out under the same growth conditions on (100) InP substrates mis

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96b7effc22ef93175c7d1f7e2fbb196b
https://doi.org/10.1088/0268-1242/13/8a/048

Integration of optical amplifiers and passive waveguide devices on InP using selective area chemical beam epitaxy

Autor: H Vonk, MK Meint Smit, C. A. Verschuren, Ys Oei, PJ Harmsma, M.R. Leys

Publikováno v: Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

High quality butt joints were fabricated in the InGaAsP system using a Selective Area Chemical Beam Epitaxy (SA-CBE) regrowth step. Coupling losses were as low as 0.1 dB/interface for butt joints between similar transparent layer stacks. Active and p

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d76e7e6b2ab3f2be66b50b795379c944
https://doi.org/10.1109/iciprm.1999.773710

Entanglement between a Diamond Spin Qubit and a Photonic Time-Bin Qubit at Telecom Wavelength.

Autor: Tchebotareva A; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft, Netherlands., Hermans SLN; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands., Humphreys PC; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands., Voigt D; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft, Netherlands., Harmsma PJ; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft, Netherlands., Cheng LK; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft, Netherlands., Verlaan AL; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft, Netherlands., Dijkhuizen N; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft, Netherlands., de Jong W; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft, Netherlands., Dréau A; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France., Hanson R; QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.; Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.

Publikováno v: Physical review letters [Phys Rev Lett] 2019 Aug 09; Vol. 123 (6), pp. 063601.

Characterization of a photonic strain sensor in silicon-on-insulator technology.

Autor: Westerveld WJ; Faculty of Applied Sciences, Delft University of Technology, Delft, The Netherlands. w.j.westerveld@tudelft.nl, Pozo J, Harmsma PJ, Schmits R, Tabak E, van den Dool TC, Leinders SM, van Dongen KW, Urbach HP, Yousefi M

Publikováno v: Optics letters [Opt Lett] 2012 Feb 15; Vol. 37 (4), pp. 479-81.