Zobrazeno 1 - 10
of 6 311
pro vyhledávání: '"PIN diode."'
Autor:
Masume Soleimaninia
Publikováno v:
فصلنامه علوم و فناوری فضایی, Vol 17, Iss 3, Pp 71-82 (2024)
Exposure to ionizing radiation in space can potentially destroy electronic devices due to single-event effects (SEEs). Developing modern space technology requires high-voltage devices to supply the increased electric power demand. A widely recognized
Externí odkaz:
https://doaj.org/article/20f2ab63f13b4f5792be61a864e375dd
Autor:
Thayuan Rolim de Sousa, Deisy Formiga Mamedes, Juliete da Silva Souza, Valdemir Praxedes da Silva Neto
Publikováno v:
Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Vol 23, Iss 4 (2024)
Abstract In this work, a reconfigurable frequency-selective surface (FSS) with a very simple biasing network that offers singleor multi-band response is presented. The proposed structure is formed by the V-shaped elements on a single-sided dielectric
Externí odkaz:
https://doaj.org/article/edfbc449471c404fb3970c881f995f0a
Publikováno v:
Journal of Electromagnetic Engineering and Science, Vol 24, Iss 3, Pp 243-253 (2024)
This article presents a transmit/receive switch that utilizes a broadband microstripline hybrid coupler. The proposed switch is suitable for application in both 3T and 7T magnetic resonance imaging. It operates within three frequency ranges, covering
Externí odkaz:
https://doaj.org/article/8243dfdcd1a84fd59ea7e0948c12ec79
Publikováno v:
Advanced Electromagnetics, Vol 13, Iss 2 (2024)
This work presents the design and experimental validation of a compact frequency reconfigurable coplanar waveguide (CPW)-fed ultra-wideband (UWB) antenna with a capability to on-demand reject WLAN frequencies within the range of 5.15 GHz to 5.85 GHz,
Externí odkaz:
https://doaj.org/article/75bd65df5dbc4970a24583c35a3f1821
Autor:
G. Jansirani, R. Gandhi Raj
Publikováno v:
Tehnički Vjesnik, Vol 31, Iss 6, Pp 2022-2027 (2024)
This article presents a compact reconfigurable antenna capable of wide-band, dual-band operation. The proposed antenna is having two closed rings with ELC integration in the inner ring. The entire structure is designed and fabricated on a FR4 substra
Externí odkaz:
https://doaj.org/article/4d1d01fe50764f3fb42dabaaf3ca5b5b
Publikováno v:
IEEE Access, Vol 12, Pp 136995-137003 (2024)
A 35-bit electronically-controlled digital substrate integrated waveguide (SIW) phase shifter with high phase resolution and large phase shift range is proposed in this paper. The main part of phase shifter contains two rows of metallic vias in each
Externí odkaz:
https://doaj.org/article/82b86007986a4b24a93299c643148c48
Autor:
Adamu Halilu Jabire, Hamad M. Alkhoori, Adnan Ghaffar, Yanal S. Faouri, Abdulrahman Dahir, Mousa I. Hussein
Publikováno v:
IEEE Access, Vol 12, Pp 120165-120180 (2024)
This study introduces a coplanar waveguide MIMO antenna design that offers both frequency and pattern reconfigurability. The antenna is intended for applications in WiMAX, WLAN, and X-Band. It is constructed using an FR4 substrate with dimensions of
Externí odkaz:
https://doaj.org/article/7b7070f2a29c4d89962c34e5cd14ee0a
Publikováno v:
IEEE Access, Vol 12, Pp 118371-118376 (2024)
This work presents a highly sensitive monolithic optical receiver in $\mathrm {0.35~\mu m}$ CMOS. The integrator-based frontend employs periodic photocurrent integration on a parasitic capacitance in combination with an ultra-low-capacitance PIN phot
Externí odkaz:
https://doaj.org/article/ab03a7e59cde47fd9b94bb13953962c2
Autor:
Widad Faraj A. Mshwat, Jamal Sulieman Kosha, Abubakar Salisu, Atta Ullah, Nazar T. Ali, Issa Elfergani, Chan Hwang See, Chemseddine Zebiri, Jonathan Rodriguez, Raed Abd-Alhameed
Publikováno v:
IEEE Access, Vol 12, Pp 110283-110298 (2024)
Four miniaturized four-element multiple-input multiple-output (MIMO) antenna designs are proposed, designed, and fabricated with dimensions of 26 mm x 26 mm x 0.8 mm each. The first MIMO design operates at 3.5 GHz, while the second operates at 5.2 GH
Externí odkaz:
https://doaj.org/article/918ce4c184554593bedb071d713b5be2
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 683-691 (2024)
This study discusses the effect of stress on 4H-silicon carbide (4H-SiC) power diodes using numerical simulations. Two power diodes were evaluated; namely, a 600 V PiN diode and 1.8 kV junction barrier Schottky (JBS) diode. Stress changes the carrier
Externí odkaz:
https://doaj.org/article/70ee468c75d042d1814d2fc5109ed0ae