Zobrazeno 1 - 10
of 480
pro vyhledávání: '"PI Xiaodong"'
Charge carrier mobility is at the core of semiconductor materials and devices optimization, and Hall measurement is one of the most important techniques for its characterization. The Hall factor, defined as the ratio between Hall and drift mobilities
Externí odkaz:
http://arxiv.org/abs/2210.02813
Autor:
Chen Guanbi, Wang Lei, Sheng Xia, Liu Hongjuan, Pi Xiaodong, Zhang Yuanyuan, Li Dongsheng, Yang Deren
Publikováno v:
Nanoscale Research Letters, Vol 5, Iss 5, Pp 898-903 (2010)
Abstract In2O3 nanowires that are 10–50 nm in diameter and several hundred nanometers to micrometers in length have been synthesized by simply annealing Cu–In compound at a relatively low temperature of 550°C. The catalysis of Cu on the growth o
Externí odkaz:
https://doaj.org/article/2703a57850fb40f49f7e89657de965d7
Two-dimensional (2D) Transition Metal Chalcogenides (TMCs) have attracted tremendous interest from both the scientific and technological communities due to their variety of properties and superior tunability through layer number, composition, and int
Externí odkaz:
http://arxiv.org/abs/2203.03894
Recent progress in the synthesis and assembly of two-dimensional (2D) materials has laid the foundation for various applications of atomically thin layer films. These 2D materials possess rich and diverse properties such as layer-dependent band gaps,
Externí odkaz:
http://arxiv.org/abs/2203.03895
Publikováno v:
Phys. Rev. Applied 17, 054011(2022)
Basal-plane dislocations (BPDs) pose a great challenge to the reliability of bipolar power devices based on the 4H silicon carbide (4H-SiC). It is well established that heavy nitrogen (N) doping promotes the conversion of BPDs to threading edge dislo
Externí odkaz:
http://arxiv.org/abs/2202.13508
Publikováno v:
In Cell Reports Physical Science 17 July 2024 5(7)
Autor:
Zhou, Lue, Han, Shuyao, Liu, Heng, He, Ziyu, Huang, Junli, Mu, Yuncheng, Xie, Yuhao, Pi, Xiaodong, Lu, Xinhui, Zhou, Shu, Hou, Yanglong
Publikováno v:
In Cell Reports Physical Science 17 July 2024 5(7)
Publikováno v:
Journal of Applied Physics; 5/21/2024, Vol. 135 Issue 19, p1-10, 10p
Publikováno v:
Journal of Applied Physics; 4/7/2024, Vol. 135 Issue 13, p1-7, 7p
Publikováno v:
In Journal of Crystal Growth 15 December 2024 648