Zobrazeno 1 - 10
of 8 694
pro vyhledávání: '"PECVD"'
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-11 (2024)
Abstract In this study, for the first time, the optimization of applied pressure for achieving the one of the best tribological properties of diamond-like carbon (DLC) coating on graphite surface using plasma-enhanced chemical vapor deposition (PECVD
Externí odkaz:
https://doaj.org/article/67e766b97fc049c1816a69f3d792268b
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract Co-doping of phosphorus and boron elements into crystalline silicon quantum dot (c-Si QD) is an effective approach for enhancing the photoluminescence (PL) performance. In this paper, we report on the preparation of hydrogenated silicon nitr
Externí odkaz:
https://doaj.org/article/96112088b18c4acab132a4eb603cf7f1
Autor:
Omesh Kapur, Dongkai Guo, Jamie Reynolds, Daniel Newbrook, Yisong Han, Richard Beanland, Liudi Jiang, C. H. Kees de Groot, Ruomeng Huang
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-10 (2024)
Abstract Integrating resistive memory or neuromorphic memristors into mainstream silicon technology can be substantially facilitated if the memories are built in the back-end-of-line (BEOL) and stacked directly above the logic circuitries. Here we re
Externí odkaz:
https://doaj.org/article/310a2511724a4e97beaca14530c113bd
Autor:
Chen‐Hsuan Lu, Kuang‐Ming Shang, Shi‐Ri Lee, Jheng‐Ying Li, Patricia T.C. Lee, Chyi‐Ming Leu, Yu‐Chong Tai, Nai‐Chang Yeh
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 27, Pp n/a-n/a (2024)
Abstract Large‐area graphene is typically synthesized on rolled‐annealed copper foils, which require transferring to other substrates for applications. This study examines large‐area graphene growth on electrodeposited (ED) copper foils—used
Externí odkaz:
https://doaj.org/article/13fd04cace0b45dba847360c6501986b
Publikováno v:
Nano Trends, Vol 7, Iss , Pp 100044- (2024)
Plasma-Enhanced Chemical Vapor Deposition (PECVD) of amorphous silicon nitride (SiNx) thin films is a critical procedure in microelectronics serving as a surface passivation layer and dielectric barrier. However, intrinsic film stress continuously bu
Externí odkaz:
https://doaj.org/article/2dac6754681d4530ad61ff74918bc521
Autor:
Adriano de Oliveira, Argemiro S. da Silva Sobrinho, Douglas M. G. Leite, Jonas J. Neto, Rodolfo L. P. Gonçalves, Marcos Massi
Publikováno v:
REM: International Engineering Journal, Vol 77, Iss 4 (2024)
Abstract A Hollow Cathode Plasma Enhanced Chemical Vapor Deposition (HC-PECVD) reactor was used to deposit silver doped Diamond-Like Carbon (Ag-DLC) films on Ti6Al4V alloy employing two methodologies: i) producing a silicon interlayer, using tetramet
Externí odkaz:
https://doaj.org/article/9c82d32bdb1e4014a4af32c668e2b948
Publikováno v:
Solar, Vol 4, Iss 1, Pp 162-178 (2024)
Nanocrystalline silicon oxide (nc-SiOx:H) is a multipurpose material with varied applications in solar cells as a transparent front contact, intermediate reflector, back reflector layer, and even tunnel layer for passivating contacts, owing to the ea
Externí odkaz:
https://doaj.org/article/e37f4f37af184c2ca6c582e52b1ee0c8
Akademický článek
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Autor:
Soni Prayogi
Publikováno v:
Indonesian Journal of Chemistry, Vol 24, Iss 1, Pp 267-274 (2024)
Using plasma-enhanced chemical vapor deposition (PECVD), a mixed gas of silane (SiH4) and methane (CH4) was diluted with hydrogen (H2) to produce thin films of silicon nanocrystals embedded in a silicon carbide (SiC) matrix. This method prevents the
Externí odkaz:
https://doaj.org/article/fb0111734ae84bf7aff0fb05c2be394c
Publikováno v:
Nanomaterials, Vol 14, Iss 20, p 1635 (2024)
The high surface area and transfer-less growth of graphene on dielectric materials is still a challenge in the production of novel sensing devices. We demonstrate a novel approach to graphene synthesis on a C-plane sapphire substrate, involving the m
Externí odkaz:
https://doaj.org/article/8ff2affd2bb44827b4772519407f7a60