Extrinsic capacitance extraction for GaAs and GaN FETs from low to high temperatures

Autor: Ali A. Rezazadeh, Christophe Gaquiere, Mohammad A. Alim, Giovanni Crupi

Publikováno v: Semiconductor Science and Technology
Semiconductor Science and Technology, 2018, 33 (8), ⟨10.1088/1361-6641/aacd56⟩
Semiconductor Science and Technology, IOP Publishing, 2018, 33 (8), ⟨10.1088/1361-6641/aacd56⟩

International audience; The main aim of this article is to present an experimental analysis of the thermal influence on the positive derivatives of the real parts of impedance parameters against frequency (PDRZ) for microwave GaN and GaAs based HEMTs

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53e30b663629e32e293acf8b57310417
https://hal.science/hal-03183491