Zobrazeno 1 - 10
of 507
pro vyhledávání: '"PANCHERI, L."'
Autor:
Follo, U., Gioachin, G., Ferrero, C., Mandurrino, M., Bregant, M., Bufalino, S., Carnesecchi, F., Cavazza, D., Colocci, M., Corradino, T., Rolo, M. Da Rocha, Di Nicolantonio, G., Durando, S., Margutti, G., Mignone, M., Nania, R., Pancheri, L., Rivetti, A., Sabiu, B., de Souza, G. G. A., Strazzi, S., Wheadon, R.
In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $\mu$m. This prototype is formed by a pixel array
Externí odkaz:
http://arxiv.org/abs/2406.19906
Autor:
Arcidiacono, R., Borghi, G., Boscardin, M., Cartiglia, N., Vignali, M. Centis, Costa, M., Betta, G-F. Dalla, Ferrero, M., Ficorella, F., Gioachin, G., Lanteri, L., Mandurrino, M., Menzio, L., Mulargia, R., Pancheri, L., Paternoster, G., Rojas, A., Sadrozinski, H-F W., Seiden, A., Siviero, F., Sola, V., Tornago, M.
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve exce
Externí odkaz:
http://arxiv.org/abs/2211.13809
Autor:
Carnesecchi, F., Strazzi, S., Alici, A., Arcidiacono, R., Borghi, G., Boscardin, M., Cartiglia, N., Vignali, M. Centis, Cavazza, D., Betta, G. -F. Dalla, Durando, S., Ferrero, M., Ficorella, F., Ali, O. Hammad, Mandurrino, M., Margotti, A., Menzio, L., Nania, R., Pancheri, L., Paternoster, G., Scioli, G., Siviero, F., Sola, V., Tornago, M., Vignola, G.
This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a
Externí odkaz:
http://arxiv.org/abs/2208.05717
Autor:
Menzio, L., Arcidiacono, R., Borghi, G., Boscardin, M., Cartiglia, N., Vignali, M. Centis, Costa, M., Betta, G-F. Dalla, Ferrero, M., Ficorella, F., Gioachin, G., Mandurrino, M., Pancheri, L., Paternoster, G., Siviero, F., Sola, V., Tornago, M.
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RS
Externí odkaz:
http://arxiv.org/abs/2204.07226
Autor:
Mazza, S. M., Gee, C., Zhao, Y., Padilla, R., Ryan, E., Tournebise, N., Darby, B., McKinney-Martinez, F., Sadrozinski, H. F. -W., Seiden, A., Schumm, B., Cindro, V., Kramberger, G., Mandić, I., Mikuž, M., Zavrtanik, M., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Sola, V., Staiano, A., Boscardin, M., Della Betta, G. F., Ficorella, F., Pancheri, L., Paternoster, G.
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maxi
Externí odkaz:
http://arxiv.org/abs/2201.08933
Autor:
Mandurrino, M., Arcidiacono, R., Bisht, A., Borghi, G., Boscardin, M., Cartiglia, N., Vignali, M. Centis, Betta, G. -F. Dalla, Ferrero, M., Ficorella, F., Ali, O. Hammad, Rojas, A. D. Martinez, Menzio, L., Pancheri, L., Paternoster, G., Siviero, F., Sola, V., Tornago, M.
In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LG
Externí odkaz:
http://arxiv.org/abs/2111.14235
Autor:
Darby, B., Mazza, S. M., McKinney-Martinez, F., Padilla, R., Sadrozinski, H. F. -W., Seiden, A., Schumm, B., Wilder, M., Zhao, Y., Arcidiacono, R., Cartiglia, N., Ferrero, M., Mandurrino, M., Sola, V., Staiano, A., Cindro, V., Kranberger, G., Mandiz, I., Mikuz, M., Zavtranik, M., Boscardin, M., Della Betta, G. F., Ficorella, F., Pancheri, L., Paternoster, G.
Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distanc
Externí odkaz:
http://arxiv.org/abs/2111.12656
Autor:
Siviero, F., Arcidiacono, R., Borghi, G., Boscardin, M., Cartiglia, N., Costa, M., Dalla Betta, G.-F., Ferrero, M., Ficorella, F., Mandurrino, M., Markovic, L., Pancheri, L., Paternoster, G., Sola, V., Tornago, M.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A April 2024 1061
Autor:
Tornago, M., Arcidiacono, R., Cartiglia, N., Costa, M., Ferrero, M., Mandurrino, M., Siviero, F., Sola, V., Staiano, A., Apresyan, A., Di Petrillo, K., Heller, R., Los, S., Borghi, G., Boscardin, M., Betta, G-F Dalla, Ficorella, F., Pancheri, L., Paternoster, G., Sadrozinski, H., Seiden, A.
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sen
Externí odkaz:
http://arxiv.org/abs/2007.09528
Autor:
Mandurrino, M., Cartiglia, N., Tornago, M., Ferrero, M., Siviero, F., Paternoster, G., Ficorella, F., Boscardin, M., Pancheri, L., Betta, G. F. Dalla
In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD rep
Externí odkaz:
http://arxiv.org/abs/2003.04838