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Au-assisted MOVPE self-assembly and properties of GaAs, AlGaAs, and GaAs-AlGaAs core-shell nanowires
Publikováno v:
The 4th International Conference on Sensing Technology (ICST), Lecce, 2010
info:cnr-pdr/source/autori:P. Prete, F. Marzo, I. Miccoli, P. Paiano, N. Lovergine/congresso_nome:The 4th International Conference on Sensing Technology (ICST)/congresso_luogo:Lecce/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:P. Prete, F. Marzo, I. Miccoli, P. Paiano, N. Lovergine/congresso_nome:The 4th International Conference on Sensing Technology (ICST)/congresso_luogo:Lecce/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
GaAs, AlGaAs and GaAs-AlGaAs core-shell nanowires (NWs) may find potential applications in the fields of photo-detectors and solar cells. Here we present their self-assembly by Au-catalysed metalorganic vapour phase epitaxy and related physical prope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f3a1c4b7c5f480854f81c9a73f982f23
https://publications.cnr.it/doc/115681
https://publications.cnr.it/doc/115681
Autor:
PAIANO, PASQUALE, PRETE, Paola, LOVERGINE, Nicola, MANCINI, Anna Maria, E. SPEISER, W. RICHTER
The morphology, structure and phonon properties of well-aligned and kink-free GaAs nanowires grown on (1¯ 1¯ 1¯)B GaAs are reported. The nanowires were grown at temperatures down to 400°C by Au-catalysed MOVPE using tBuAsH2 and Me3Ga in H2 ambien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::57359f2cb4e3acc8f597dad7a908df62
https://hdl.handle.net/11587/300771
https://hdl.handle.net/11587/300771
The effect of precursors vapour stoichiometry on the morphological, structural and electrical properties of nominally undoped ZnTe grown on (100)GaAs by metalorganic vapour phase epitaxy is reported. The epilayers were grown at 350°C using dimethylz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4034::fd1c6c5992640dc0b5bd18a5b85ed464
https://hdl.handle.net/11587/301045
https://hdl.handle.net/11587/301045
Akademický článek
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Akademický článek
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Autor:
Piscopiello, Emanuela, Tapfer, Leander, Vittori Antisari, Marco, Paiano, Pasquale, Prete, Paola, Lovergine, Nicola
Publikováno v:
MRS Online Proceedings Library; 2006, Vol. 959 Issue 1, p1-6, 6p
Akademický článek
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Autor:
Buick, Benjamin, Speiser, Eugen, Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, Richter, Wolfgang
Publikováno v:
Physica Status Solidi (B); Aug2010, Vol. 247 Issue 8, p2027-2032, 6p
Autor:
Buick, Benjamin, Speiser, Eugen, Prete, Paola, Paiano, Pasquale, Lovergine, Nicola, Richter, Wolfgang
Publikováno v:
Physica Status Solidi (B); Aug2010, Vol. 247 Issue 8, pn/a-n/a, 1p
Publikováno v:
Physica status solidi. B, Basic research 247 (2010): 2027–2032. doi:10.1002/pssb.200983948
info:cnr-pdr/source/autori:Buick B, Speiser E, Prete P, Paiano P, Lovergine N, Richter W/titolo:Single AlxGa1-xAs nanowires probed by Raman spectroscopy/doi:10.1002%2Fpssb.200983948/rivista:Physica status solidi. B, Basic research/anno:2010/pagina_da:2027/pagina_a:2032/intervallo_pagine:2027–2032/volume:247
info:cnr-pdr/source/autori:Buick B, Speiser E, Prete P, Paiano P, Lovergine N, Richter W/titolo:Single AlxGa1-xAs nanowires probed by Raman spectroscopy/doi:10.1002%2Fpssb.200983948/rivista:Physica status solidi. B, Basic research/anno:2010/pagina_da:2027/pagina_a:2032/intervallo_pagine:2027–2032/volume:247
The stoichiometry of single ternary III-V semiconductor nanowires was analyzed by Raman spectroscopy. Free-standing AlxGa1-xAs nanowires were obtained through metal organic vapor phase epitaxy (MOVPE) by the vapor liquid solid (VLS) mechanism on GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::238cc790f9bab638ac1f3324a338f4b6
https://hdl.handle.net/11587/338781
https://hdl.handle.net/11587/338781