Can Physics Teaching be improved by Explanation of Tricks with a Motorcycle?

Autor: Risch, Matthias R.

Publikováno v: parts published in: M. Risch, Der Kamm?sche Kreis - Wie stark kann man beim Kurvenfahren Bremsen?, Praxis der Naturwissenschaften - Physik in der Schule, 7, Nr. 5, 2002, Vol. 51, Aulis Verlag Deubner, Language: German

A priority of physics instruction is to help students make the connection between the formulae they think they are required to memorize and the real world in which they interact every day. If you ask students to describe a situation in real life invo

Externí odkaz: http://arxiv.org/abs/1008.5041

Principle of least effort vs. maximum efficiency: derivingZipf-Pareto’s laws

Autor: Qiuping Alexandre Wang

Publikováno v: Chaos, Solitons and Fractals
6th International Workshop on Statistical Physics and Mathematics for Complex Systems
Chaos, Solitons and Fractals, Elsevier, 2021, 153, pp.111489
HAL

International audience; This work provides a mathematical tool to derive Zipf-Pareto laws directly from the idea that living systems always follow the rule of least effort in their activities. In order to implement this idea in a general way taking i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7b6641081b2a5c1cc1e7d23a6bb75c4a
https://hal.archives-ouvertes.fr/hal-02503417v3/document

ChinePrinciple of least effort vs. maximum efficiency: derivingZipf-Pareto’s laws

Autor: Wang, Qiuping A., Wang, Qiuping

Publikováno v: 6th International Workshop on Statistical Physics and Mathematics for Complex Systems
6th International Workshop on Statistical Physics and Mathematics for Complex Systems, Jan 2020, Xiamen, China. pp.15-19

International audience; This work provides a mathematical tool to derive Zipf-Pareto laws directly from the idea that living systems always follow the rule of least effort in their activities. In order to implement this idea in a general way taking i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d321a938525426a8fd8c56b15a8ca5ca
https://hal.archives-ouvertes.fr/hal-02503417v2/document

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Microstructural origins of localization in InGaN quantum wells

Autor: D.J. Beesley, David W. Saxey, Menno J. Kappers, Alfred Cerezo, Tongtong Zhu, S.E. Bennett, Rachel A. Oliver, Colin J. Humphreys

Publikováno v: Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2010, 43 (35), pp.354003. ⟨10.1088/0022-3727/43/35/354003⟩

International audience; The startling success of GaN-based light emitting diodes despite the high density of dislocations found in typical heteroepitaxial material has been attributed to localisation of carriers at non-uniformities in the quantum wel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::355913b31f2d51f2dfe1d5747a06685e
https://ora.ox.ac.uk/objects/uuid:873280ba-77ef-46bb-a887-55a89a7f6dfc