Zobrazeno 1 - 10
of 36
pro vyhledávání: '"P.V. Melnik"'
Publikováno v:
Ukrainian Journal of Physics; Vol. 60 No. 2 (2015); 148
Український фізичний журнал; Том 60 № 2 (2015); 148
Український фізичний журнал; Том 60 № 2 (2015); 148
The rarely observed Si(001)-c(8 × 8) reconstruction is a unique nanostructured state of the Si(001) surface. It was obtained through the sample contamination with trace amounts of Cu below the electron spectroscopy detection limit. As our detailed S
Publikováno v:
Ukrainian Journal of Physics; Vol. 60 No. 11 (2015); 1132
Український фізичний журнал; Том 60 № 11 (2015); 1132
Український фізичний журнал; Том 60 № 11 (2015); 1132
The c(2×8) ground state reconstruction of the Ge(111) surface can be easily disrupted by the 2×2 reconstruction, since both of them are rather close to each other in terms of the surface free energy. Both structures are comprehensively studied in t
Publikováno v:
Ukrainian Journal of Physics; Vol. 61 No. 1 (2016); 75
Український фізичний журнал; Том 61 № 1 (2016); 75
Український фізичний журнал; Том 61 № 1 (2016); 75
We report on the 5.5√3 × 5.5√3 − R30 ∘ overlayer superstructure observed by the scanning tunneling microscopy on the Ge(111) surface. It shows pronounced effects of the local density of states leading to the strong dependence of STM images o
Publikováno v:
Ukrainian Journal of Physics; Vol. 59 No. 8 (2014); 805
Український фізичний журнал; Том 59 № 8 (2014); 805
Український фізичний журнал; Том 59 № 8 (2014); 805
The growth of ultra-thin bismuth films up to 15 atomic layers on the atomically clean Ge(111)-c(2×8) substrate at 300 K is investigated before and after the annealing at 450 K by means of ultra-high vacuum scanning tunneling microscopy. The whole ra
Publikováno v:
Materialwissenschaft und Werkstofftechnik. 44:129-135
A brief overview of hexagonal superstructures with a periodicity of similar to 3 nm formed on Ru(0001) and Ge(111) by graphene or hexagonal boron nitride with a thickness of just a single atomic layer is given. A periodic height corrugation of such l
Publikováno v:
Surface Science. 605:1771-1777
We present a detailed scanning tunneling microscopy investigation of ultra-thin Bi films on Ge(111)-c(2 × 8) in the range up to 1.5 ML. During growth at 300 K, the second/third atomic layer of Bi already starts to nucleate before the completion of t
Publikováno v:
Applied Surface Science. 255:6421-6425
Fine (oscillating) structure (FS) in the elastically scattered electron spectra (ESES) [O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Sci. 258 (1991) 239; O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Rev. Lett
Publikováno v:
Surface Science. 600:1185-1192
The STM technique with a special Bi/W tip was used to study the interaction of hydrogen atoms with the Si(1 1 1)-7 × 7 surface. The reactivity of different room temperature (RT) adsorption sites, such as adatoms (A), rest atoms (R), and corner holes
Publikováno v:
Surface Science. :119-123
It is found that Bi dimers in B positions (with axis perpendicular to Si dimer row) can make concerted movements in the same row. The estimated probability of such concerted movements of B dimers is at least by three orders of magnitude higher than u
Publikováno v:
Surface Science. 497:47-58
We report on the first scanning tunneling microscopy (STM) observations demonstrating that the Si(1 0 0)-c(4×4) surface structure may have a point group symmetry 1 m. Along with those, we were able to reproduce well known images of a point group sym