Zobrazeno 1 - 10
of 123
pro vyhledávání: '"P.V. Gray"'
Autor:
T.P. Chow, M.F. Chang, Michael S. Adler, H. Yilmaz, Bantval Jayant Baliga, P.V. Gray, G.C. Pifer
Publikováno v:
IEEE Transactions on Electron Devices. 39:1317-1321
An n-channel vertical insulated-gate bipolar transistor (IGBT) process which implements a self-aligned p/sup +/ short inside the DMOS diffusion windows is proposed and demonstrated experimentally. The salient feature of the new process is the placeme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51617c08dabb2dd564a390410f971265
https://doi.org/10.1109/16.137310
https://doi.org/10.1109/16.137310
Publikováno v:
IEEE Transactions on Electron Devices. 27:343-349
A 600-V vertical power MOSFET with low on-resistance is described. The low resistance is achieved by means of achieving near-ideal drain junction breakdown voltage and reduced drain spreading resistance from the use of an extended channel design. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9db96d5ad448d08f80cb9a8c3c1659a3
https://doi.org/10.1109/t-ed.1980.19866
https://doi.org/10.1109/t-ed.1980.19866
Publikováno v:
IEEE Transactions on Electron Devices. 31:817-820
A new power MOSFET has been fabricated that conducts 75 A with an on-state resistance of 0.012 Ω and blocks 60 V. The device may be used as a low-loss synchronous rectifier in efficient high-frequency power supplies or as a high-current power switch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c03ab64bd327b521a5ece9fa8c929275
https://doi.org/10.1109/t-ed.1984.21613
https://doi.org/10.1109/t-ed.1984.21613
Publikováno v:
IEEE Transactions on Electron Devices. 31:821-828
A new three-terminal power device, called the insulated gate transistor (IGT), with voltage-controlled output characteristics is described. In this device, the best features of the existing families of bipolar devices and power MOSFET's are combined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aed8c6cf23aefea889d15e343c35e84
https://doi.org/10.1109/t-ed.1984.21614
https://doi.org/10.1109/t-ed.1984.21614
Autor:
P.V. Gray
Publikováno v:
Proceedings of the IEEE. 57:1543-1551
Study of the silicon-silicon dioxide system as a junction between a nearly ideal semiconductor and insulator has aroused both scientific and technological interest. Surface phenomena associated with this system are influenced by contamination and imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a22fa5515fc0fcb59e6086b3897c43
https://doi.org/10.1109/proc.1969.7334
https://doi.org/10.1109/proc.1969.7334
Publikováno v:
Solid-State Electronics. 11:1105-1112
Films 2000–5000 A thick of Mo or W deposited over thin films of thermally grown SiO 2 are shown to be effective high temperature diffusion masks against both phosphorous and boron. These metal films may be precisely patterned and their diffusion ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d55ddd3ee1af1c7723a2a79b8a4a04
https://doi.org/10.1016/0038-1101(68)90002-6
https://doi.org/10.1016/0038-1101(68)90002-6
Publikováno v:
IEEE Electron Device Letters. 5:323-325
Two-dimensional computer modeling of insulated gate transistor (IGT) structures has been used to demonstrate the suppression of latchup in the parasitic thyristor by increasing the p-base conductivity using a deep p+ diffusion in the device cells. Ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d22d399fbecb490bd2c4967bd5630fa5
https://doi.org/10.1109/edl.1984.25932
https://doi.org/10.1109/edl.1984.25932
Autor:
Dale M. Brown, P.V. Gray
Publikováno v:
Applied Physics Letters. 8:31-33
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94dcaf39291916ca2947ba911c6fb91a
https://doi.org/10.1063/1.1754468
https://doi.org/10.1063/1.1754468
Publikováno v:
1987 International Electron Devices Meeting.
P-channel, collector-shorted, vertical insulated gate bipolar transistors with hexagonal and square cell geometries were studied. The presence of the collector short, surrounding the edges of the device, resulted in a linear I-V region before the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea72c22a9aca67ee0b48e7e4d4d3baec
https://doi.org/10.1109/iedm.1987.191517
https://doi.org/10.1109/iedm.1987.191517
Publikováno v:
1976 International Electron Devices Meeting.
This paper describes the results of calculations and experiments relating to silicon surface characteristics and how they are altered by implanted dopant layers. Properties considered are capacitance-voltage characteristics, doping profiling methods,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::782bfdd90d6e063bde725b52492fc556
https://doi.org/10.1109/iedm.1976.189052
https://doi.org/10.1109/iedm.1976.189052