Zobrazeno 1 - 10
of 29
pro vyhledávání: '"P.T.J. Gennissen"'
Publikováno v:
Sensors and Actuators A: Physical. 62:652-662
Traditionally there have been two types of micromachining, bulk and surface micromachining. More recently a modification to tile bulkmicromachining technique, where the micromachining is performed in the top few microns of the substrate, has been rec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da8a9298b2a0c9ab1f1b9f68df5d4f45
https://doi.org/10.1016/s0924-4247(97)01502-1
https://doi.org/10.1016/s0924-4247(97)01502-1
Publikováno v:
Microelectronics Journal. 28:449-464
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8f9432a6d0c94cdff05b77367c66ba2
https://doi.org/10.1016/s0026-2692(96)00069-9
https://doi.org/10.1016/s0026-2692(96)00069-9
Autor:
Pasqualina M. Sarro, Reinoud F. Wolffenbuttel, P.T.J. Gennissen, Patrick J. French, M. Bartek
Publikováno v:
Sensors and Actuators A: Physical. 41:123-128
An integrated silicon colour sensor using selective epitaxial growth (SEG) of silicon is presented. The sensor concept is based on the strong wavelength dependence of the photon absorption coefficient in silicon in the visible spectral range. Photocu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdd967b3a1f8fa5c1a8cf81b6b76582b
https://doi.org/10.1016/0924-4247(94)80099-5
https://doi.org/10.1016/0924-4247(94)80099-5
Publikováno v:
Proceedings of the International Solid-State Sensors and Actuators Conference - TRANSDUCERS '95.
The Confined Selective Epitaxial Growth (CSEG) technique, is optimized to produce 0.9 /spl mu/m uniformly thick and up to 15 /spl mu/m wide device-quality single-crystal silicon slabs isolated from the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67ee3b87a685081e71edfa36cd775151
https://doi.org/10.1109/sensor.1995.717099
https://doi.org/10.1109/sensor.1995.717099
Autor:
Pasqualina M. Sarro, Patrick J. French, Reinoud F. Wolffenbuttel, P.T.J. Gennissen, M. Bartek
Publikováno v:
Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).
Characterization of single- and polycrystalline silicon deposition in an epitaxial reactor aimed at MEMS applications is presented. HCl addition to the H/sub 2/-SiH/sub 2/Cl/sub 2/ gas system is used to control selectivity and growth rate ratios betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eede88f75bd2553a3d095098c75caa28
https://doi.org/10.1109/sensor.1997.635500
https://doi.org/10.1109/sensor.1997.635500
Autor:
P.T.J. Gennissen, P.J. French
Publikováno v:
Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95746ff27e279c853ccf6c11095a6515
https://doi.org/10.1109/sensor.1997.613624
https://doi.org/10.1109/sensor.1997.613624
Autor:
P.T.J. Gennissen, Patrick J. French
Publikováno v:
SPIE Proceedings.
This paper presents the development of accelerometers using the epitaxial layer as the mechanical structure. In this work epi-poly was chosen for the fabrication of the accelerometer structures. Epi-poly is a polycrystalline material deposited in an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60d8ebd93c80dc6e632ef2c7d1151378
https://doi.org/10.1117/12.360512
https://doi.org/10.1117/12.360512
Publikováno v:
Technical Digest. IEEE International MEMS 99 Conference. Twelfth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.99CH36291).
This paper presents a new wet etching technique for micromachining called SEEMS (Single-step Electrochemical Etching for Micro Structures). An accelerometer structure can be achieved using this SEEMS process. However, some problems which are involved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7a607e44542333da24384cdf42c2711
https://doi.org/10.1109/memsys.1999.746753
https://doi.org/10.1109/memsys.1999.746753
Autor:
P.J. French, P.T.J. Gennissen
Publikováno v:
Sensor Technology in the Netherlands: State of the Art ISBN: 9789401061032
This paper reports on sacrificial oxide etching with very high selectivity to aluminum metallization using mixtures of 73% HF and IPA. Etch rate ratios up to 680 have been achieved even for (slow etching) thermal oxide. Thermal oxide etch rates up to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1043a828a3a4f490f2db27a628aa1ec
https://doi.org/10.1007/978-94-011-5010-1_31
https://doi.org/10.1007/978-94-011-5010-1_31
Publikováno v:
SPIE Proceedings.
This paper presents the development of a pressure sensor based on epi-poly processing technology. The use of epi-poly creates an SOI structure and thus facilitates the use of an oxide etch-stop for the bulk micromachining. This avoids the requirement
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fa8bbdd88a6321505c9e122d1020343
https://doi.org/10.1117/12.284518
https://doi.org/10.1117/12.284518