Zobrazeno 1 - 10
of 42
pro vyhledávání: '"P.T. Joseph"'
Publikováno v:
Diamond and Related Materials. 20:232-237
The transition of diamond grain sizes from micron- to nano- and then to ultranano-size could be observed when hydrogen concentration is being decreased in the Ar/CH 4 plasma. When grown in H 2 -rich plasma (H 2 = 99% or 50%), well faceted microcrysta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da3d86f742f936547e916ce2d43f5644
https://doi.org/10.1016/j.diamond.2010.12.018
https://doi.org/10.1016/j.diamond.2010.12.018
Publikováno v:
Diamond and Related Materials. 19:927-931
Ion implantation is commonly used to modify the surface or near-surface properties of materials. In this work, plasma treated ultrananocrystalline diamond (UNCD) films were implanted using 100 and 200 keV high dose (1016 ions/cm2) nitrogen ions and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23efbae858a84dd16064bb38c8378b20
https://doi.org/10.1016/j.diamond.2010.02.027
https://doi.org/10.1016/j.diamond.2010.02.027
Autor:
P.T. Joseph Fr.
Publikováno v:
NHRD Network Journal. 3:25-31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16d9542a3cf3653388ee114308c5bfd1
https://doi.org/10.1177/0974173920100205
https://doi.org/10.1177/0974173920100205
Publikováno v:
Diamond and Related Materials. 18:169-172
The electron field emission (EFE) properties of Si nanostructures (SiNS), such as Si nanorods (SiNR) and Si nanowire (SiNW) bundles were investigated. Additionally, ultrananocrystalline diamond (UNCD) growth on SiNS was carried out to improve the EFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::703d8f8e2fe49e8fa5ef91806588ad7d
https://doi.org/10.1016/j.diamond.2008.10.020
https://doi.org/10.1016/j.diamond.2008.10.020
Publikováno v:
Journal of Nanoscience and Nanotechnology. 8:4198-4201
Different forms of diamond have been shown to have qualities as field emission sources. As a consequence, much effort has been focused on both the synthesis of diamond nanostructures to increase the field enhancement factor and understanding the emis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::98d125578edb7b173343161a49f44336
https://doi.org/10.1166/jnn.2008.an49
https://doi.org/10.1166/jnn.2008.an49
Publikováno v:
Diamond and Related Materials. 17:1812-1816
Nitrogen (N) ion implantation induced modification on structural and electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) films were reported. Low dose ion implantation slightly improved the EFE properties of UNCD films mai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f7d348ad617029b3fcbfa6f11ddc598
https://doi.org/10.1016/j.diamond.2008.03.032
https://doi.org/10.1016/j.diamond.2008.03.032
Publikováno v:
Diamond and Related Materials. 17:476-480
Highly transparent ultrananocrystalline diamond (UNCD) films were deposited on quartz substrates using microwave plasma enhanced chemical vapor deposition (MPECVD) method. Low temperature growth of high quality transparent UNCD films was achieved by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d589e65ab55d4dfe24614d1c2b27615d
https://doi.org/10.1016/j.diamond.2007.10.013
https://doi.org/10.1016/j.diamond.2007.10.013
Autor:
Wei-Chuan Fang, Huan Niu, H.Y. Huang, N.H. Tai, Umesh Palnitkar, I-Nan Lin, P.T. Joseph, Hsiu Fung Cheng
Publikováno v:
Diamond and Related Materials. 17:864-867
Ultra-nanocrystalline diamond (UNCD) films prepared by microwave plasma enhanced chemical vapor deposition were implanted using 0.3 MeV nitrogen ions under a dose of 10 13 , 10 14 , and 10 15 ions cm − 2 . While the surface morphology of the UNCD f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::528a71b10c2c0f5c76e789654f45e5ee
https://doi.org/10.1016/j.diamond.2007.11.008
https://doi.org/10.1016/j.diamond.2007.11.008
Publikováno v:
Journal of Electromagnetic Waves and Applications. 21:1445-1451
Nano-sized BaTiO3, SrTiO3 and TiO2 powders have been used to synthesize (Ba x ,Sr1−x )TiO3 materials via mixed oxide process. Then (Ba x ,Sr1−x )TiO3 (BST) (x = 0.5 and 0.6) with addition of high-Q (quality factor) Ba4Ti13O30 (BT) materials were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6174e381bae4ef914762740753b5b9f
https://doi.org/10.1163/156939307782000307
https://doi.org/10.1163/156939307782000307
Publikováno v:
Integrated Ferroelectrics. 77:45-50
Thin films of BaxSr1−xTiO3 (BST) serial materials have the advantages of adjustable tunability and are good candidates for the application in DRAM and microwave devices. However, these films usually have loss tangent higher than the order of 0.01 a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7892910370e93629c2384c9414a7204e
https://doi.org/10.1080/10584580500414044
https://doi.org/10.1080/10584580500414044