Zobrazeno 1 - 3
of 3
pro vyhledávání: '"P.S.-H. Ying"'
Autor:
Masaaki Yashiro, Randy Mckee, P.S.-H. Ying, C.W. Teng, Gishi Chung, Ih-Chin Chen, Donald J. Coleman, Bing-Whey Shen
Publikováno v:
International Technical Digest on Electron Devices Meeting.
The authors address cell leakage issues and conclude that a unique field-plate isolated trench capacitor cell structure, already demonstrated at the 16-Mb level with over 1 s of data retention (50% bit fail measured at 90 degrees C), is scalable to 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bea4312d3dc842e675d92cf8f50f3de6
https://doi.org/10.1109/iedm.1989.74221
https://doi.org/10.1109/iedm.1989.74221
Autor:
M.M. Mosiehl, A.P. Lane, Ih-Chin Chen, John Kuehne, William F. Richardson, J. Paterson, Lino A. Velo, P.S.-H. Ying, A.R. Paterson, Richard A. Chapman, C. Blanton
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
A sub-half micron CMOS technology has been developed using rapid thermal processing (RTP) and a simplified process design. The threshold voltages are set high to permit operation above room temperature without excessive leakage. Novel process feature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ef0bfc85eceb8fc0296d0f04e55e054
https://doi.org/10.1109/iedm.1991.235414
https://doi.org/10.1109/iedm.1991.235414
Conference
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