Zobrazeno 1 - 10
of 47
pro vyhledávání: '"P.R. Poudel"'
Publikováno v:
Acta Horticulturae. :561-566
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4508d9202bb85c6fddc009842096b2af
https://doi.org/10.17660/actahortic.2022.1352.76
https://doi.org/10.17660/actahortic.2022.1352.76
Akademický článek
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Akademický článek
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Publikováno v:
Journal of Lumbini Medical College, Vol 5, Iss 2 (2017)
Introduction: Sialolithiasis is the most common disease of the salivary glands. Majority of sialoliths occur in the submandibular gland and is a common cause of acute and chronic infections of the gland. The size varies from one mm to one cm. Size gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2fe5c50eff63bd25b45879e5bac14bbb
https://jlmc.edu.np/index.php/JLMC/article/view/125
https://jlmc.edu.np/index.php/JLMC/article/view/125
Publikováno v:
Acta Horticulturae. :329-334
Recent studies in grapevine revealed that VvMYBA transcription factors control the expression from UDP-glucose flavonoid: 3-O-glucosyltransferase (UFGT) to the candidate genes putatively involved in the vacuolar anthocyanin transport. Additionally, d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27ec76bf481bab41e06fee167b7f01e8
https://doi.org/10.17660/actahortic.2014.1046.44
https://doi.org/10.17660/actahortic.2014.1046.44
Publikováno v:
Applied Physics A. 112:801-806
Zinc oxide (ZnO) nanostructures have been synthesized by the implantation of ZnO molecular ions into SiO2 followed by high temperature thermal annealing. 35 keV ZnO− ions were implanted to a fluence of 5×1016 ions/cm2 into SiO2 at room temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3b9a5d596810ff421d0554dca88b0dc
https://doi.org/10.1007/s00339-013-7692-5
https://doi.org/10.1007/s00339-013-7692-5
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 283:93-96
A detailed XPS analysis has been performed to observe the effect of carbon ion fluences in the formation of β-SiC by ion implantation. Carbon ion fluences of 1 × 1017, 2 × 1017, 5 × 1017, and 8 × 1017 atoms/cm2 at an ion energy of 65 keV have be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11dca4780872605e546f95a0192a0a8a
https://doi.org/10.1016/j.nimb.2012.04.017
https://doi.org/10.1016/j.nimb.2012.04.017
Autor:
D. R. Diercks, Yuri M. Strzhemechny, P.R. Poudel, Bibhudutta Rout, Floyd D. McDaniel, J. A. Paramo
Publikováno v:
Journal of Electronic Materials. 40:1998-2003
A systematic study of the formation of buried β-SiC structures by carbon ion implantation into Si followed by high-temperature thermal annealing has been carried out. A high fluence of carbon ions (8 × 1017 atoms/cm2) was implanted at 65 keV energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e6dffe858ff36ff0d152b05d69d5822
https://doi.org/10.1007/s11664-011-1695-9
https://doi.org/10.1007/s11664-011-1695-9
Publikováno v:
Applied Physics A. 104:183-188
The β-SiC nanocrystals were synthesized by the implantation of carbon ions (C−) into silicon followed by high-temperature annealing. The carbon fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms/cm2 were implanted at an ion energy of 65 keV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77dcb2b62b01a15ae9352f1478fd9ddd
https://doi.org/10.1007/s00339-010-6099-9
https://doi.org/10.1007/s00339-010-6099-9
Akademický článek
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