Zobrazeno 1 - 10
of 199
pro vyhledávání: '"P.R. Hageman"'
Autor:
Gerbe W. G. van Dreumel, Sjoerd Verhagen, T. Bohnen, Hina Ashraf, P.R. Hageman, Jan L. Weyher, Elias Vlieg
Publikováno v:
Journal of Crystal Growth, 312, 2542-2550
Journal of Crystal Growth, 312, 18, pp. 2542-2550
Journal of Crystal Growth, 312, 18, pp. 2542-2550
The main limitation in the application of hydride vapor phase epitaxy for the large scale production of thick free-standing GaN substrates is the so-called parasitic deposition, which limits the growth time and wafer thickness by blocking the gallium
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bd9fa1922280da3c4184569af00ab8a
https://doi.org/10.1016/j.jcrysgro.2010.04.010
https://doi.org/10.1016/j.jcrysgro.2010.04.010
Autor:
Aryan E. F. de Jong, Hina Ashraf, Willem J. P. van Enckevort, T. Bohnen, Jan L. Weyher, P.R. Hageman, Elias Vlieg, Gerbe W. G. van Dreumel
Publikováno v:
physica status solidi c. 7:1749-1755
The nucleation of both classic HCl-based and novel Cl based HVPE GaN on mis-oriented sapphire substrates was investigated. The use of Cl2in HVPE increases the growth rate by a factor of 4-5 and strongly reduces the parasitic deposition, allowing for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c99d522b2a78800bc4ddaadc44639deb
https://doi.org/10.1002/pssc.200983444
https://doi.org/10.1002/pssc.200983444
Autor:
D.V. Sridhara Rao, Daniela Gogova, Roberto Fornari, Hina Ashraf, Colin J. Humphreys, P.R. Hageman, Dietmar Siche
Publikováno v:
Journal of Crystal Growth, 312, 595-600
Journal of Crystal Growth, 312, 4, pp. 595-600
Journal of Crystal Growth, 312, 4, pp. 595-600
A new method has been approached to reduce the dislocation density in hydride vapor phase epitaxy (HVPE)-grown GaN epi-layers. By this method, state of the art quality, GaN layers were grown on sapphire substrates with an in situ treatment of SiNx in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c2340d6f5be4b78f24f841f1ac7e275
https://doi.org/10.1016/j.jcrysgro.2009.11.043
https://doi.org/10.1016/j.jcrysgro.2009.11.043
Autor:
Jan Misiewicz, P.R. Hageman, Robert Kudrawiec, Jarosław Serafińczuk, Jan L. Weyher, Hina Ashraf
Publikováno v:
Journal of Crystal Growth, 312, 4, pp. 595-600
Journal of Crystal Growth, 312, 595-600
Journal of Crystal Growth, 312, 595-600
High quality free-standing (FS) GaN layers of thickness ∼600 μm were prepared by exploiting spontaneous separation mechanism. Study of the mechanism revealed that the separation took place inside the GaN layer and not from the sapphire substrate.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a490892f57ccf2849c2ac6b7b79f18fa
https://doi.org/10.1016/j.jcrysgro.2009.11.043
https://doi.org/10.1016/j.jcrysgro.2009.11.043
Autor:
T. Bohnen, P.R. Hageman, James H. Edgar, Gerbe W. G. van Dreumel, Willem J. P. van Enckevort, Rienk E. Algra, Elias Vlieg, Marcel A. Verheijen
Publikováno v:
physica status solidi (a). 206:2809-2815
The formation of ScAlN nanowires on ScN/6H-SiC(0001) by hydride vapor phase epitaxy (HVPE) was analyzed. The diameters and lengths of the nanowires were 50 to 150 nm and 1 µm, respectively. The nanowires had a Al/Sc metal ratio of 95/5 as measured b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92d3558cab01aad6f110e7bfd74507ff
https://doi.org/10.1002/pssa.200925060
https://doi.org/10.1002/pssa.200925060
Autor:
Bram Hoex, M.C.J.C.M. Krämer, MK Meint Smit, Johan Hendrik Klootwijk, A Grzegorczyk, Wmm Erwin Kessels, P.R. Hageman, F Fouad Karouta, Jjm Thieu Kwaspen, EC Timmering
Publikováno v:
ECS Transactions. 16:181-191
We have investigated the influence of the structural and compositional properties of silicon nitride layers on the passivation of AlGaN/GaN HEMTs grown on sapphire substrates by assessing their continuous wave (CW) and pulsed current-voltage (I-V) ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f233df736290913bee1c18d083191986
https://doi.org/10.1149/1.2983174
https://doi.org/10.1149/1.2983174
Publikováno v:
Journal of Crystal Growth, 310, 17, pp. 3957-3963
Journal of Crystal Growth, 310, 3957-3963
Journal of Crystal Growth, 310, 3957-3963
GaN layers of various thicknesses (40-350 μm) were grown by hydride vapor-phase epitaxy (HVPE) on sapphire substrates and on the metal-organic chemical vapor deposition (MOCVD) grown GaN/Al 2 O 3 templates. The quality of the grown layers on these t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd64dc64c2c23a9d9ad1cb35d54baf7f
https://doi.org/10.1016/j.jcrysgro.2008.06.031
https://doi.org/10.1016/j.jcrysgro.2008.06.031
Publikováno v:
Journal of Crystal Growth, 310, 6, pp. 1075-1080
Journal of Crystal Growth, 310, 1075-1080
Journal of Crystal Growth, 310, 1075-1080
The epitaxy of scandium nitride deposited by hydride vapor phase epitaxy on 6H–SiC(0 0 0 1) substrates is reported. The structure and composition of the deposited films were dependent on both the scandium metal source and substrate temperatures. At
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f474f8f2a49be5a72d18e9cb13c6baca
https://doi.org/10.1016/j.jcrysgro.2007.12.053
https://doi.org/10.1016/j.jcrysgro.2007.12.053
Publikováno v:
Journal of Crystal Growth, 307, 1, pp. 19-25
Journal of Crystal Growth, 307, 19-25
Journal of Crystal Growth, 307, 19-25
In this paper, a study is presented on the effect of In on the surface morphology of GaN grown by HVPE. Experiments are performed with N2 and H2 as the carrier gasses, both with and without In present in the reactor. The adding of In increases the mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a41a14a92696a9a460d1ebf05ab4cd03
https://doi.org/10.1016/j.jcrysgro.2007.06.005
https://doi.org/10.1016/j.jcrysgro.2007.06.005
Autor:
H.F.F. Jos, Herbert Zirath, Kristina Dynefors, Jan L. Weyher, M. Rudziński, T. Rodle, P. A. van Hal, P.R. Hageman, P.K. Larsen, Vincent Desmaris
Publikováno v:
physica status solidi c. 3:2231-2236
We report a study of iron doped GaN layers grown on sapphire and SiC by Metal Organic Chemical Vapor Deposition (MOCVD) using ferrocene as the Fe precursor. The influence of iron doping on the electrical, structural and morphological properties of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d45314377b507cabcbb6ade7f947c61f
https://doi.org/10.1002/pssc.200565379
https://doi.org/10.1002/pssc.200565379