Zobrazeno 1 - 10
of 360
pro vyhledávání: '"P.R. Fleming"'
Autor:
J. Gordon Scannell
Publikováno v:
New England Journal of Medicine. 337:207-208
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcdde3e0169cdaf2869f9306aaa512fb
https://doi.org/10.1056/nejm199707173370321
https://doi.org/10.1056/nejm199707173370321
Autor:
N.H. Thom, P.R. Fleming
Publikováno v:
Bearing Capacity of Roads, Railways and Airfields ISBN: 9781003078814
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecbdc1f0cefdaa84a7d54a2167f85e4e
https://doi.org/10.1201/9781003078814-79
https://doi.org/10.1201/9781003078814-79
Akademický článek
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Autor:
Parvin, Nargish1 (AUTHOR) nargish.parvin@gmail.com, Mandal, Tapas K.1 (AUTHOR) tps.mndl@gmail.com, Joo, Sang-Woo1 (AUTHOR) tps.mndl@gmail.com
Publikováno v:
Pharmaceutics. Nov2024, Vol. 16 Issue 11, p1366. 51p.
Autor:
Dong, Shuo1 (AUTHOR) 2220902045@cnu.edu.cn, Ma, Pengfei2 (AUTHOR), Yang, Xingchuan1 (AUTHOR), Luo, Nana3 (AUTHOR), Chen, Linhan2 (AUTHOR), Wang, Lili1 (AUTHOR), Song, Hanyang1 (AUTHOR), Zhao, Shaohua2 (AUTHOR), Zhao, Wenji1 (AUTHOR) 4973@cnu.edu.cn
Publikováno v:
Remote Sensing. Nov2024, Vol. 16 Issue 21, p3970. 17p.
Autor:
M.C. Casey, F. Barsun, S.A. Nation, Lloyd W. Massengill, A. Balasubramanian, O.A. Amusan, Matthew J. Gadlage, Arthur F. Witulski, Joseph S. Melinger, T. D. Loveless, Bharat L. Bhuva, Dale McMorrow, P.R. Fleming
Publikováno v:
IEEE Transactions on Nuclear Science. 55:3309-3313
An on-chip charge-collection measurement circuit has been designed and fabricated in a 130 nm bulk CMOS process. Laser testing is used to verify the effectiveness of the on-chip charge-collection circuit technique for characterizing single event char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d21f59d8e5f411c72689930c54a0337
https://doi.org/10.1109/tns.2008.2007123
https://doi.org/10.1109/tns.2008.2007123
Publikováno v:
IEEE Transactions on Circuits and Systems II: Express Briefs. 55:838-842
The floating amplifier inputs in switched-capacitor differential circuits are identified as extremely vulnerable to single events. A radiation hardened by design mitigation technique is presented. The vulnerability of the floating inputs is improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b76b80e80f8d1b3ff2d7e9fdc0b1e039
https://doi.org/10.1109/tcsii.2008.923437
https://doi.org/10.1109/tcsii.2008.923437
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 8:135-144
Accurately analyzing the single-event (SE) vulnerability of static random-access memory (SRAM) cells leads to precisely calculated soft-error rates (SERs). Random dopant-fluctuation-induced Vt variations affect the SE vulnerability of these memory ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0abefd36e25eac2c2c8ce0ae39911712
https://doi.org/10.1109/tdmr.2007.915011
https://doi.org/10.1109/tdmr.2007.915011
Publikováno v:
IEEE Transactions on Nuclear Science. 54:2400-2406
Random dopant fluctuation (RDF) induced threshold voltage variations affect two critical parameters used as a measure of single event (SE) hardness (i) single event transient (SET) pulse widths and (ii) critical charge . This causes an increase in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e9ea894c0743a82b7a5cef599574f6c
https://doi.org/10.1109/tns.2007.908167
https://doi.org/10.1109/tns.2007.908167