Zobrazeno 1 - 10
of 18
pro vyhledávání: '"P.R. Bie"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
A Ka-band front end has been developed that integrates a low-loss wide-band monolithic mixer, a two-stage IF amplifier on semi-insulating GaAs, and a lumped-element Gunn LO. Small size (0.5 in/sup 3/) and good performance (11-dB gain with a DSB noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c7418564351cfb8015580d739191a9
https://doi.org/10.1109/mwsym.1985.1131926
https://doi.org/10.1109/mwsym.1985.1131926
Publikováno v:
1992 IEEE Microwave Symposium Digest MTT-S.
Integrated circuit (IC) modules have been developed for a multichannel Ka-band receiver. The modules include a monolithic microwave integrated circuit (MMIC)-compatible mixer/IF amplifier and a microwave integrated circuit (MIC) local oscillator (LO)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14c1a6324a003f2b378272df4e7e5fee
https://doi.org/10.1109/mwsym.1992.188184
https://doi.org/10.1109/mwsym.1992.188184
Publikováno v:
IEEE Transactions on Electron Devices. 32:2844-2847
A GaAs Schottky-drain [1] power FET (SDFET) having a 2.4-mm gate periphery and 1.5-µm gate length has been developed, and it realized excellent performance at 10 GHz. This includes an output power in excess of 1 W and 36-percent power-added efficien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::72d3aa444ac3d76f9cd091be9bd8f77d
https://doi.org/10.1109/t-ed.1985.22425
https://doi.org/10.1109/t-ed.1985.22425
Publikováno v:
IEEE Transactions on Electron Devices. 21:624-630
A novel quasi-planar and highly reliable varactor configuration has been developed to batch fabricate fully passivated GaAs Schottky varactors with near ideal characteristics and state of the art performance. Typically, they exhibit at zero bias a ju
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bee3584b3eb0b0397442bbd460f834e
https://doi.org/10.1109/t-ed.1974.17980
https://doi.org/10.1109/t-ed.1974.17980
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 34:412-419
A Ku-band front end has been developed which integrates a low-loss wide-band monolithic mixer, a two-stage hybrid IF amplifier, and a lumped-element Gunn local oscillator (LO). Small size (0.5 cubic in), high performance, and potentially low producti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccdc0dfec128fe70b83f269a76c60091
https://doi.org/10.1109/tmtt.1986.1133361
https://doi.org/10.1109/tmtt.1986.1133361
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 30:2184-2189
A subharmonic mixer is described that has an instantaneous bandwidth of 11 to 14 GHz centered near 95 GHz. A wide bandwidth is achieved by the close integration of a low-capacitance diode mount, printed circuit matching elements, and simple yet effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff1e6e349134d446b7bc740ca7c8e8d2
https://doi.org/10.1109/tmtt.1982.1131405
https://doi.org/10.1109/tmtt.1982.1131405
Publikováno v:
Electronics Letters. 22:510-512
An all-refractory-metal GaAs MESFET (ARFET) making use of a Ta Schottky barrier with a thick gold overlayer for the source, gate and drain, and very highly doped N+-layers (2x1019 cm-3) to achieve low-resistivity nonalloyed ohmic contacts, has been s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf08ea2ae8a8e6af0227edb8dac15ae6
https://doi.org/10.1049/el:19860348
https://doi.org/10.1049/el:19860348
Publikováno v:
1987 IEEE MTT-S International Microwave Symposium Digest.
Design, fabrication, and performance of a quasi-monolithic distributed GaAs FET amplifier is discussed. A gain of 20 dB and noise figure of 5.8 dB over 2 to 18 GHz are achieved. The amplifier circuits, using modified commercially available GaAs FET c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65884a9b68172e3bb811537279d4c568
https://doi.org/10.1109/mwsym.1987.1132545
https://doi.org/10.1109/mwsym.1987.1132545
Publikováno v:
Electronics Letters. 15:509
A novel GaAs beam-lead Mott Schottky-barrier mixer device having a zero-bias junction capacitance near 10 fF, very low parasitic capacitance, ideality factor near or below 1.07, and a zero-bias cutoff frequency as high as 5000 GHz has been developed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69475b941e762e933ab35702c7136170
https://doi.org/10.1049/el:19790368
https://doi.org/10.1049/el:19790368
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