Zobrazeno 1 - 10
of 58
pro vyhledávání: '"P.R. Besser"'
Publikováno v:
Journal of Electronic Materials. 34:1500-1508
Microstructural evolution during elevated temperature annealing of sputter deposited copper (Cu) films was investigated by electron backscatter diffraction (EBSD). Analysis of films was performed both in situ using a heating stage, and by ex-situ obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa559b7f8219ea9cfa42c6ab8eb9d32
https://doi.org/10.1007/s11664-005-0157-7
https://doi.org/10.1007/s11664-005-0157-7
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:523-529
Stress migration (SM) or stress-induced voiding experiments were conducted for two back-end-of-line (BEoL) technologies: Cu/FTEOS and Cu/low-k. Experiments have shown the mean time to failure (MTF) depends on inter-layer dielectric (ILD) materials pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1bad0d57fe11830163de732ba825bac
https://doi.org/10.1109/tdmr.2004.833225
https://doi.org/10.1109/tdmr.2004.833225
Autor:
P.R. Besser, Christine Hau-Riege, Arief Suriadi Budiman, Nobumichi Tamura, Amit P. Marathe, Young-Chang Joo, J. R. Patel, William D. Nix
Publikováno v:
2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.
The mass transport of Cu during electromigration (EM) testing is typically dominated by interface diffusion. If a mechanism other than interface diffusion begins to affect the overall transport process, then the effective diffusivity, D, of the EM pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83fe10602c1a9101569777acd4c18259
https://doi.org/10.1109/relphy.2007.369880
https://doi.org/10.1109/relphy.2007.369880
Autor:
C.J. Zhai, Christine Hau-Riege, R.C. Blish, Amit P. Marathe, S. Taylor, H.W. Yao, Kurt Taylor, Darrell M. Erb, P.R. Besser
Publikováno v:
2004 IEEE International Reliability Physics Symposium. Proceedings.
Stress migration (SM) or stress-induced voiding (SIV) experiments were conducted for two BEoL (Back End of Line) technologies: Cu/FTEOS and Cu/Low-k. Experiments have shown the mean time to failure (MTF) depends on ILD (interlayer dielectric) materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a9f4128326b4beafa947d098cdc63aa
https://doi.org/10.1109/relphy.2004.1315329
https://doi.org/10.1109/relphy.2004.1315329
Autor:
J. Sanchez, P.R. Besser
Publikováno v:
Proceedings of the IEEE 1998 International Interconnect Technology Conference (Cat. No.98EX102).
The effects of surface and interfacial energies and trench geometry on microstructure evolution in damascene-processed interconnect structures are modelled. Grain growth and texture evolution are shown to depend on the magnitude of surface and interf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f4f2ad7aa7067439a554f2c1feb571
https://doi.org/10.1109/iitc.1998.704912
https://doi.org/10.1109/iitc.1998.704912
Autor:
Ehrenfried Zschech, P.R. Besser
Publikováno v:
Proceedings of the IEEE 2000 International Interconnect Technology Conference (Cat. No.00EX407).
Metal interconnect and barrier characterization are challenged by reduced feature sizes, advanced materials, and new technologies. Microstructure characterization of new materials is done for thin films deposited on flat substrates and for on-chip in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8bb8f64b462d9fa446a5e8cfb373680
https://doi.org/10.1109/iitc.2000.854334
https://doi.org/10.1109/iitc.2000.854334
Autor:
P.R. Besser, W.C. Baek, William D. Nix, J. Pak, Christine Hau-Riege, G. Neubauer, A. Huang, Arief Suriadi Budiman, H.S. Kim, C. Lor
Publikováno v:
Journal of Electronic Materials. 39(11):2483-2488
While Black’s equation for electromigration (EM) in interconnects with n = 1 is rigorously based on the principles of electrotransport, n > 1 is more commonly observed empirically. This deviation is usually attributed to Joule heating. An alternati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab52ab2236e498c9bfc33475bca1b430
Electromigration-Induced Plasticity: Texture Correlation and Implications for Reliability Assessment
Autor:
P.R. Besser, Nobumichi Tamura, Arief Suriadi Budiman, J. R. Patel, Christine Hau-Riege, Young-Chang Joo, Amit P. Marathe, William D. Nix
Publikováno v:
Journal of Electronic Materials. 38(3):379-391
Plastic behavior has previously been observed in metallic interconnects undergoing high current density electromigration (EM) loading. In this study of Cu interconnects, using the synchrotron technique of white beam X-ray microdiffraction, we have fu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ab660c2fba4cc4d8763d2f129214051
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.