Zobrazeno 1 - 10
of 35
pro vyhledávání: '"P.P. Rutkevych"'
Publikováno v:
Sovremennye problemy distantsionnogo zondirovaniya Zemli iz kosmosa. 13:159-171
Publikováno v:
Computational Materials Science. 49:S95-S98
Use of molecular dynamics (MD) as the “frontend” in a multi-scale simulation requires high accuracy and therefore demands significant computer resources, particularly for obtaining interfacial properties. In this work we investigate the computati
Autor:
Kostya Ostrikov, Shuyan Xu, Shiyong Huang, Yuping Ren, Qijin Cheng, Jidong Long, J.W. Chai, P.P. Rutkevych
Publikováno v:
Thin Solid Films. 516:5991-5995
Nanocrystalline silicon carbide (nc-SiC) films are prepared by low-frequency inductively coupled plasma chemical vapor deposition from feedstock gases silane and methane diluted with hydrogen at a substrate temperature of 500 °C. The effect of diffe
Publikováno v:
Vacuum. 80:1126-1131
Synthesis of various functional nanoassemblies, by using a combination of low-pressure reactive plasma-enhanced chemical deposition and plasma-assisted rf magnetron sputtering deposition is reported. This paper details how selective generation and ma
Publikováno v:
Contributions to Plasma Physics. 45:514-521
Different aspects of the plasma-enhanced chemical vapor deposition of various carbon nanostructures in the ionized gas phase of high-density, low-temperature reactive plasmas of Ar+H2+CH4 gas mixtures are studied. The growth techniques, surface morph
Publikováno v:
Journal of Applied Physics. 96:4421-4428
The possibility of the thermophoretic control of the plasma-grown building units in the plasma-assisted deposition of various carbon-based nanostructures on Ni-based catalyzed Si substrates is reported. It is experimentally demonstrated that varying
Publikováno v:
Computational Materials Science. 30:303-307
The results of numerical simulation of the equilibrium parameters of a low pressure nanopowder-generating discharge in silane for the plasma enhanced chemical vapor deposition (PECVD) of nanostructured silicon-based films are presented. It is shown t
Publikováno v:
Journal of Applied Physics. 95:2713-2724
The results of numerical simulations, optical emission spectroscopy (OES), and quadrupole mass spectrometry (QMS) of inductively coupled Ar/CH4/H2 plasmas in the plasma enhanced chemical vapor deposition (PECVD) of self-assembled vertically aligned c
Publikováno v:
Physica Scripta. 70:322-325
The results of 1D simulation of nanoparticle dynamics in the areas adjacent to nanostructured carbon-based films exposed to chemically active complex plasma of CH4 + H2 + Ar gas mixtures are presented. The nanoparticle-loaded near-substrate (includin
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