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Autor:
P.P. Apte, Sharad Saxena, R. Burch, Joseph C. Davis, Karthik Vasanth, P.K. Mozumder, S. Rao, C. Fernando
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 11:527-536
Run-to-run and supervisory control algorithms determine the equipment recipe to produce a desired output wafer state given the incoming wafer state and the current equipment model. For simple, low-dimensional equipment models, this problem is not dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db94b5a3b704c2eb7ac4029a0285ec7
https://doi.org/10.1109/66.728548
https://doi.org/10.1109/66.728548
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 11:475-485
Process technology development constitutes a significant cost in manufacturing integrated circuits. In this paper, we present a model-based approach for developing new process technology rapidly and inexpensively, using the salicide process to demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85c077db1085abd13217353bc34303b4
https://doi.org/10.1109/66.705382
https://doi.org/10.1109/66.705382
Autor:
P.P. Apte, Jiunn-Yann Tsai
Publikováno v:
Thin Solid Films. 270:589-595
A reliable TiSi 2 TiN stack thickness model is an essential component for modeling the titanium salicide process, and such a model is not well-developed in current process simulators and in the literature. To determine this model, a design of experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20973912dca1278ebdebde49a7fdaee7
https://doi.org/10.1016/0040-6090(96)80081-2
https://doi.org/10.1016/0040-6090(96)80081-2
Autor:
Paul J. Gyugyi, Charles D. Schaper, Butrus T. Khuri-Yakub, Fahrettin Levent Degertekin, Mehrdad M. Moslehi, S.C. Wood, Krishna C. Saraswat, P. Dankoski, Gene F. Franklin, Len Booth, Yunzhong Chen, J. Pei, P.P. Apte, Y.J. Lee
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 7:159-175
This paper presents an overview of research at Stanford University on the development of concepts of a programmable factory, based on a new generation of flexible multifunctional equipment implemented in a smaller flexible factory. This approach is d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::582a31b51f5a0f390452a994596eb532
https://doi.org/10.1109/66.286852
https://doi.org/10.1109/66.286852
Autor:
P.P. Apte, Krishna C. Saraswat
Publikováno v:
IEEE Transactions on Electron Devices. 41:1595-1602
Ultrathin gate and tunnel oxides in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and eventually causes dielectric breakdown. Oxide reliability, therefore, is a key concern in technology scaling for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2082d797b266ce3f9162506ed7774791
https://doi.org/10.1109/16.310111
https://doi.org/10.1109/16.310111
Autor:
Q.Z. Hong, Jorge A. Kittl, G.A. Dixit, P.P. Apte, Amitava Chatterjee, Ih-Chin Chen, Douglas A. Prinslow
Publikováno v:
Proceedings of Technical Papers. International Symposium on VLSI Technology, Systems, and Applications.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bb433854cab42b966e5e2c4a56467ee
https://doi.org/10.1109/vtsa.1997.614719
https://doi.org/10.1109/vtsa.1997.614719
Publikováno v:
IEEE Electron Device Letters. 17:506-508
A new process technology has been demonstrated that successfully addresses an urgent challenge in silicide technology scaling: the formation of low-resistivity TiSi/sub 2/ on sub-half-micrometer polysilicon lines. The key idea is the use of a TiN cap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76e7f016d6dbe7e7f81ebead665de086
https://doi.org/10.1109/55.541763
https://doi.org/10.1109/55.541763
Publikováno v:
Applied Physics Letters. 67:2308-2310
A detailed kinetic study of the C49 to C54 phase transformation in TiSi2 thin films was performed, to obtain the full time, temperature, and linewidth dependence of the fraction transformed during rapid thermal annealing on patterned deep‐sub‐mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a218f06211426fea210aa40ab2333d1
https://doi.org/10.1063/1.115135
https://doi.org/10.1063/1.115135
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
We present the first integrated simulation and modeling approach for the silicide-source/drain structure, and for the silicide-diffusion contact resistance; thus, providing the critical link between electrical performance and the processing/structura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee7d2adacb7ac43a18e1d45402b230a6
https://doi.org/10.1109/iedm.1998.746460
https://doi.org/10.1109/iedm.1998.746460