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pro vyhledávání: '"P.O. Khouri"'
Autor:
G. Campardo, R. Micheloni, S. Commodaro, E. Yero, M. Zammabio, S. Mognoni, A. Sacco, M. Picca, A. Manstleita, M. Scotti, I. Motta, C. Golla, A. Pierin, A. Ohba, T. Fulatsuya, R. Makabe, S. Kawai, Y. Kai, S. Shimizu, T. Ohnakado, I. Sugihara, R. Bez, A. Grossi, A. Modelli, P.O. Khouri, G. Torelli
Publikováno v:
2000 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.00CH37056).
The ever increasing demand for denser flash memories leads to the multilevel (ML) storage approach, where any memory cell is programmed to one of m=2/sup n/ predetermined states and can hence store n bits. This 64 Mb 4-level cell (2b/cell) flash memo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbdd72be53fcbc01649137483f723115
https://doi.org/10.1109/isscc.2000.839782
https://doi.org/10.1109/isscc.2000.839782
