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pro vyhledávání: '"P.O. Hansson"'
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Akademický článek
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Publikováno v:
Journal of Crystal Growth. :390-398
It has been experimentally found that it will be difficult to grow 300 mm or larger diameter crystals with similar quality as for 200 mm or smaller diameter crystals. This phenomenon can be understood within the frame of the Voronkov theory in which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ee5e6364a848257a086f19668209c5
https://doi.org/10.1016/s0022-0248(98)01140-3
https://doi.org/10.1016/s0022-0248(98)01140-3
Publikováno v:
Journal of Crystal Growth. 167:24-31
We investigate by transmission electron microscopy and atomic force microscopy the development of the growth surface profile of Si 0.97 Ge 0.03 Si (001) grown from metallic solution near thermodynamic equilibrium. We show that sinusoidal surface undu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f61f5294ada1ce9005b6bcff5a6b0b2
https://doi.org/10.1016/0022-0248(96)00227-8
https://doi.org/10.1016/0022-0248(96)00227-8
Autor:
A. Gutjahr, I. Silier, N. Nagel, E. Czech, H. Raidt, E. Bauser, R. Köhler, B. Jenichen, M. Konuma, P.O. Hansson, Florian Banhart
Publikováno v:
Journal of Crystal Growth. 166:727-730
We have grown defect-free semiconductor-on-insulator (SOI) layers by liquid phase epitaxy. Defect-free Si layers grow laterally over SiO 2 by starting from seeding windows or ridge seeds on selectively oxide-masked (111) Si substrates. Growth is term
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8df2be0be8b8b3cb3eef29280daf76d3
https://doi.org/10.1016/0022-0248(96)00124-8
https://doi.org/10.1016/0022-0248(96)00124-8
Autor:
E. Czech, E. Bauser, G. Cristiani, I. Silier, A. Gutjahr, M. Konuma, P.O. Hansson, Florian Banhart
Publikováno v:
Journal of Crystal Growth. 166:234-238
Two centrifugal techniques, I and II, have been applied to grow semiconductor layers in a rotating crucible. Technique I employs centrifugal forces to transport the solutions in the liquid phase epitaxial process. Layers of Si and SiGe grown on 100 m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::098f83501b91698419acfd1767dc6d44
https://doi.org/10.1016/0022-0248(96)00097-8
https://doi.org/10.1016/0022-0248(96)00097-8
Publikováno v:
Surface Science. :896-901
We investigate by atomic force microscopy the early growth stages of Ge 0.85 Si 0.15 grown by solution epitaxy on Si(001). The layers grow in the Stranski-Krastanov growth mode with facetted islands of pyramidal and, with further growth, truncated py
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc4051c5f84d332a94b17449625d2df
https://doi.org/10.1016/0039-6028(95)00152-2
https://doi.org/10.1016/0039-6028(95)00152-2
Publikováno v:
Journal of Crystal Growth. 141:363-370
We present low temperature cathodoluminescence (CL) studies of relaxed Ge x Si 1− x , selectively grown on a patterned Si (111) substrate by liquid phase epitaxy, using heteroepitaxial lateral overgrowth. In the spectrally resolved CL of the result
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::343d410ebfcfbbf41ade043c4b2feff2
https://doi.org/10.1016/0022-0248(94)90239-9
https://doi.org/10.1016/0022-0248(94)90239-9
Publikováno v:
Surface Science. 314:L884-L888
The morphology and the electronic structure of heteroepitaxial germanium layers grown pseudomorphically by solution epitaxy on Si(001) has been investigated by scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). A significa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345b5b13af1c6ad7df2326a31a98f903
https://doi.org/10.1016/0039-6028(94)90222-4
https://doi.org/10.1016/0039-6028(94)90222-4
Publikováno v:
Solid State Phenomena. :41-46
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::996c785b6d57d397bef4dd40dd6358a6
https://doi.org/10.4028/www.scientific.net/ssp.37-38.41
https://doi.org/10.4028/www.scientific.net/ssp.37-38.41