Zobrazeno 1 - 10
of 32
pro vyhledávání: '"P.N. Uppal"'
Publikováno v:
Journal of Crystal Growth. 111:623-627
We have grown heterostructures based on low band-gap channels of Ga x In 2−x Sb ( x =0.5) and InAs x Sb 1−x ( x =0.4−1) alloys, and characterized be closely lattice them using Hall measurements. For barrier layers, we used Al x In 1−x Sb( x =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03387f3c33333abceef6418a8afee8d5
https://doi.org/10.1016/0022-0248(91)91052-c
https://doi.org/10.1016/0022-0248(91)91052-c
Publikováno v:
Journal of Crystal Growth. 111:450-455
The electrical properties of In 0.53 Ga 0.47 As grown on full two-inch InP wafers have been studied. Special emphasis was placed on investigations of the vertical and lateral uniformity of the material quality. Using the Mobility Spectrum Technique,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecc6e49e5e8d27a5257050b9c367dcd1
https://doi.org/10.1016/0022-0248(91)91018-6
https://doi.org/10.1016/0022-0248(91)91018-6
Publikováno v:
MRS Proceedings. 198
Layers of InSb and InAsxSb1-x were grown on GaAs and GaAs on Si substrates and then characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM) to determine the epilayer quality. Hall-effect measurements and photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0f73f61cd33fce7ebce03bffa1ee14e
https://doi.org/10.1557/proc-198-277
https://doi.org/10.1557/proc-198-277
Publikováno v:
Journal of Crystal Growth. 95:281-287
We investigated the quality of GaAs, Al x Ga 1− x As and In x Ga 1− x As layers grown by molecular beam epitaxy (MBE) on GaAs (100), (211), and (221). Significant differences in the quality of the layers were observed. The quality of layers of la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7e1c04e15530eb19a2a1f44c324ec92
https://doi.org/10.1016/0022-0248(89)90402-8
https://doi.org/10.1016/0022-0248(89)90402-8
Akademický článek
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Publikováno v:
MRS Proceedings. 116
Material properties of GaAs films grown on Si(321) substrates using molecular beam epitaxy (MBE) were evaluated and compared to films grown on Si(100) and Si(211). Dislocation densities in the GaAs(321) films, determined using transmission electron m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08904baf645e85e9c60df15adb679a0d
https://doi.org/10.1557/proc-116-129
https://doi.org/10.1557/proc-116-129
Publikováno v:
MRS Proceedings. 145
The density and arrangement of dislocations in In0.15Ga0.85As grown on GaAs(100)) were determined by transmission electron microscopy as a function of misorientation toward (111)A, (111)B, and (110). Strained layer superlattices were used in all case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55b4ffd8846b7a3c3f3000c4d0884262
https://doi.org/10.1557/proc-145-385
https://doi.org/10.1557/proc-145-385
Publikováno v:
Proceedings, annual meeting, Electron Microscopy Society of America. 47:590-591
A high density of interfacial dislocations are needed at the GaAs/Si interface to alleviate the 4% lattice mismatch between GaAs and Si. Some remnant dislocations thread through the epilayer and follow the growth interface. Current growth methods are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bdd9c649507e61981a3b58cc72a89a
https://doi.org/10.1017/s0424820100154925
https://doi.org/10.1017/s0424820100154925
Akademický článek
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Akademický článek
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